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Reliability of repetitively avalanched wire-bonded low-voltage discrete power trench n-MOSFETs
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Alatise, Olayiwola M., Kennedy, Ian, Petkos, George and Koh, Adrian (2011) Reliability of repetitively avalanched wire-bonded low-voltage discrete power trench n-MOSFETs. IEEE Transactions on Device and Materials Reliability, Vol.11 (No.1). pp. 157-163. doi:10.1109/TDMR.2010.2102026 ISSN 1530-4388.
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WRAP_Alatise_1070562-es-091211-ieee_tdmr_reliability_avalanched_power_mosfet.pdf - Accepted Version - Requires a PDF viewer. Download (1093Kb) |
Official URL: http://dx.doi.org/10.1109/TDMR.2010.2102026
Abstract
This paper, for the first time, investigates the reliability of wire-bonded low-voltage discrete power trench n-MOSFETs that have been subjected to repetitive unclamped inductive switching (RUIS). Automotive MOSFETs driving inductive loads may be subjected to RUIS; hence, there is a need to characterize the failure mechanisms in such applications. The failure mechanisms of repetitively avalanched wire-bonded MOSFETs are shown to be wire-bond lift-off and source metal degradation/fatigue due to thermomechanical stress cycling. Temperature excursions from avalanche pulses cause thermomechanical stresses on the wire-bond/source-metal interface as a result of differences in thermal expansion coefficients between silicon and aluminum. Trench MOSFETs exhibited an average of 10% increase in on-state resistance due to source metal fatigue after 100 million cycles of repetitive avalanche. The number of cycles to failure is investigated as a function of the avalanched induced temperature changes and is shown to follow the Coffin-Manson law. These results are important for designers of automotive systems since they are capable of predicting the long-term reliability of wire-bonded discrete power semiconductor components.
Item Type: | Journal Article | ||||
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Subjects: | T Technology > TK Electrical engineering. Electronics Nuclear engineering | ||||
Divisions: | Faculty of Science, Engineering and Medicine > Engineering > Engineering | ||||
Library of Congress Subject Headings (LCSH): | Metal oxide semiconductor field-effect transistors, Wire bonding (Electronic packaging) | ||||
Journal or Publication Title: | IEEE Transactions on Device and Materials Reliability | ||||
Publisher: | IEEE | ||||
ISSN: | 1530-4388 | ||||
Official Date: | March 2011 | ||||
Dates: |
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Volume: | Vol.11 | ||||
Number: | No.1 | ||||
Page Range: | pp. 157-163 | ||||
DOI: | 10.1109/TDMR.2010.2102026 | ||||
Status: | Peer Reviewed | ||||
Publication Status: | Published | ||||
Access rights to Published version: | Restricted or Subscription Access | ||||
Date of first compliant deposit: | 17 December 2015 | ||||
Date of first compliant Open Access: | 17 December 2015 |
Data sourced from Thomson Reuters' Web of Knowledge
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