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Reliability of repetitively avalanched wire-bonded low-voltage discrete power trench n-MOSFETs

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Alatise, Olayiwola M., Kennedy, Ian, Petkos, George and Koh, Adrian. (2011) Reliability of repetitively avalanched wire-bonded low-voltage discrete power trench n-MOSFETs. IEEE Transactions on Device and Materials Reliability, Vol.11 (No.1). pp. 157-163. ISSN 1530-4388

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Official URL: http://dx.doi.org/10.1109/TDMR.2010.2102026

Abstract

This paper, for the first time, investigates the reliability of wire-bonded low-voltage discrete power trench n-MOSFETs that have been subjected to repetitive unclamped inductive switching (RUIS). Automotive MOSFETs driving inductive loads may be subjected to RUIS; hence, there is a need to characterize the failure mechanisms in such applications. The failure mechanisms of repetitively avalanched wire-bonded MOSFETs are shown to be wire-bond lift-off and source metal degradation/fatigue due to thermomechanical stress cycling. Temperature excursions from avalanche pulses cause thermomechanical stresses on the wire-bond/source-metal interface as a result of differences in thermal expansion coefficients between silicon and aluminum. Trench MOSFETs exhibited an average of 10% increase in on-state resistance due to source metal fatigue after 100 million cycles of repetitive avalanche. The number of cycles to failure is investigated as a function of the avalanched induced temperature changes and is shown to follow the Coffin-Manson law. These results are important for designers of automotive systems since they are capable of predicting the long-term reliability of wire-bonded discrete power semiconductor components.

Item Type:

Journal Article

Subjects:

T Technology > TK Electrical engineering. Electronics Nuclear engineering

Divisions:

Faculty of Science > Engineering

Library of Congress Subject Headings (LCSH):

Metal oxide semiconductor field-effect transistors, Wire bonding (Electronic packaging)

Journal or Publication Title:

IEEE Transactions on Device and Materials Reliability

Publisher:

IEEE

ISSN:

1530-4388

Official Date:

March 2011

Dates:

Date	Event
March 2011	Published

Volume:

Vol.11

Number:

No.1

Page Range:

pp. 157-163

Identification Number:

10.1109/TDMR.2010.2102026

Status:

Peer Reviewed

Publication Status:

Published

Access rights to Published version:

Restricted or Subscription Access

References:

[1] I. Pawel, R. Siemieniec, M. Rosch, F. Hirler, and R. Herzer, ―Experimental study and simulations on two different avalanche modes in trench power MOSFETs,‖ IET Circuits Devices Syst., vol. 1, no. 5, pp. 341–346, Oct. 2007.
[2] A. Koh, Power MOSFET Single and Repetitive Avalanche Ruggedness Rating, 2003, Application note AN10273.
[3] T. Matsunaga and S. Sudo, ―Evaluation of fatigue life reliability and new lead bonding technology for power modules,‖ Mitsubishi Electr. Adv., vol. 113, pp. 13–16, 2006, Technical Reports.
[4] V Getkin, A Bar-Cohen, S Witzman ―Coffin-Manson based fatigue analysis of underfilled DCAs‖ IEEE Transaction on Components, Packaging and Manufacturing Technology, vol. 21, no. 4, pp. 577-584, Dec. 1998.
[5] A. Testa, S. D. Caro, S. Panarello, S. Patane, R. Letor, S. Russo, S. Poma and D. Patti, ―Stress analysis and lifetime estimation on power MOSFETs for automotive ABS systems,‖ in Proc. IEEE Power Electron. Spec. Conf., 2008, pp. 1169–1175.
[6] C Santoro, ―Thermal cycling and surface reconstruction in aluminum thin films‖, J. Electrochem. Soc, vol. 116, no. 3, pp. 361-364, 1969.
[7] M Arab and Z Khatir, ―Investigations on ageing of IGBTs under repetitive short-circuit operations‖, Power electronics Europe, issue 5, pp. 22-24, 2008.
[8] W. Loh, M. Corfield, H. Lu, S. Hogg, T. Tilford, and C. Johnson, ―Wirebond for power electronic modules—Effect of bonding temperature,‖ in Proc. Int. Conf. Thermal, Mech. Multi-Phys. Simul. Experiments Microelectron. Micro-Syst., EuroSime, 2007, pp. 1–6.
[9] A Hamidi, N Beck, K Thomas and E Herr, ―Reliability and lifetime evaluation of different wirebonding technologies for high power IGBT modules‖ Microelectronics Reliability, vol. 39, issues 6-7, pp. 1153-1158, 2008.
[10] T Matsunaga and Y Uegai, ―Thermal fatigue life evaluation of aluminum wire bonds ―Reliability of wire-bonding and solder joint for high temperature operation of power semiconductor device‖, Microelectronics Reliability, vol. 47, no. 12, pp. 2147-2151, 2007.
[11] J Calata, L Guo-Quan and C Luechinger, ―Evaluation of interconnect technologies for power semiconductor devices‖ The 8th intersociety conference on thermal and thermomechanical phenomena in electronic systems, 2002, pp. 1089-1096.
[12] J Onuki, M Koizumi and M Suwa, ―Reliability of thick Al wire bonds in IGBT modules for traction motor drives‖, IEEE Trans. Advanced Packaging, vol. 23, no. 1, 2000.
[13] R Amro, ―Packaging and interconnection technologies of power devices, Challenges and future trends‖, World academy of science, engineering and technology, 49, pp. 691-694, 2009.
[14] B Bernoux, R Escoffier, P Jalbaud, J Reynes, E Scheid and J Dorkel, ―Power MOSFET RDSON under repetitive avalanche cycling‖ IEEE International Symposium on Industrial Electronics,2009, pp. 2016-2019.
[15] D Sornette, T Magnin and Y Brechet, ―The physical origin of the Coffin-Manson Law in low-cycle fatigue‖, Europhysics Lett, 20 (5), pp. 433-438, 1992.
[16] H Cui, ―Accelerated temperature cycle test and Coffin-Manson model for electronic packaging‖, in proc Reliability and Maintainability Symposium, 2005, pp. 556-560.