Donetti, L., Gámiz, F., Thomas, S., Whall, Terry E., Leadley, D. R. (David R.), Hellström, P.-E., Malm, G. and Östling, Mikael. (2011) Hole effective mass in silicon inversion layers with different substrate orientations and channel directions. Journal of Applied Physics, Vol.110 (No.6). ISSN 0021-8979

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Abstract

We explore the possibility to define an effective mass parameter to describe hole transport in inversion layers in bulk MOSFETs and silicon-on-insulator devices. To do so, we employ an accurate and computationally efficient self-consistent simulator based on the six-band k·p model. The valence band structure is computed for different substrate orientations and silicon layer thicknesses and is then characterized through the calculation of different effective masses taking account of the channel direction. The effective masses for quantization and density of states are extracted from the computed energy levels and subband populations, respectively. For the transport mass, a weighted averaging procedure is introduced and justified by comparing the results with hole mobility from experiments and simulations.

Item Type:	Journal Article
Subjects:	Q Science > QC Physics
Divisions:	Faculty of Science > Physics
Library of Congress Subject Headings (LCSH):	Metal oxide semiconductor field-effect transistors -- Mathematical models
Journal or Publication Title:	Journal of Applied Physics
Publisher:	American Institute of Physics
ISSN:	0021-8979
Date:	23 September 2011
Volume:	Vol.110
Number:	No.6
Number of Pages:	8
Identification Number:	10.1063/1.3639281
Status:	Peer Reviewed
Access rights to Published version:	Restricted or Subscription Access
Funder:	Seventh Framework Programme (European Commission) (FP7/2007-2013), Spain. Ministerio de Ciencia e Innovación (MICINN)
Grant number:	FP7-CA-216373 (FP7), FP7 IST-216171 (FP7), TEC2008-06758-C02-01 (MICINN), FIS2008-05805 (MICINN), TIC-P06-1899 (MICINN)
References:	1 M. V. Fischetti and S. E. Laux, Physical Review B 48, 2244 (1993). 2 C. Jungemann, A. Emunds, and W. Engl, Solid-State Electronics 36, 1529 (1993). 3 K. Uchida, A. Kinoshita, and M. Saitoh, in Electron Devices Meeting, 2006. IEDM ’06. Inter- national (2006) pp. 1–3. 4 K. Hess, Monte Carlo device simulation: full band and beyond (Kluwer, 1991). 5 A. Abramo, L. Baudry, R. Brunetti, R. Castagne, M. Charef, F. Dessenne, P. Dollfus, R. Dut- ton, W. Engl, R. Fauquembergue, C. Fiegna, M. Fischetti, S. Galdin, N. Goldsman, M. Hackel, C. Hamaguchi, K. Hess, K. Hennacy, P. Hesto, J. Higman, T. Iizuka, C. Jungemann, Y. Ka- makura, H. Kosina, T. Kunikiyo, S. Laux, H. Lin, C. Maziar, H. Mizuno, H. Peifer, S. Ra- maswamy, N. Sano, P. Scrobohaci, S. Selberharr, M. Takenaka, T. Tang, K. Taniguchi, J. Tho- bel, R. Thoma, K. Tomizawa, M. Tomizawa, T. Vogelsang, S.Wang, X.Wang, C. Yao, P. Yoder, and A. Yoshii, IEEE Transactions on Electron Devices 41, 1646 (1994). 6 M. V. Fischetti and S. E. Laux, Physical Review B 38, 9721 (1988). 7 J. M. Luttinger and W. Kohn, Physical Review 97, 869 (1955); J. M. Luttinger, ibid. 102, 1030 (1956). 8 J. R. Chelikowsky and M. L. Cohen, Physical Review B 14, 556 (1976). 9 M. De Michielis, D. Esseni, Y. Tsang, P. Palestri, L. Selmi, A. O’Neill, and S. Chattopadhyay, Electron Devices, IEEE Transactions on 54, 2164 (2007). 10 T. Mizuno, N. Sugiyama, T. Tezuka, Y. Moriyama, S. Nakaharai, T. Maeda, and S. Takagi, in IEEE International Electron Devices Meeting, Tech. Dig. 2003 (2003) pp. 33.6.1– 33.6.4. 11 S. Takagi, M. Takayanagi, and A. Toriumi, Electron Devices, IEEE Transactions on 46, 1446 (1999). 12 S. Saito, D. Hisamoto, Y. Kimura, N. Sugii, R. Tsuchiya, K. Torii, and S. Kimura, in VLSI Technology, 2006. Digest of Technical Papers. 2006 Symposium on (2006) pp. 150–151. 13 A. Rahman, M. S. Lundstrom, and A.W. Ghosh, Journal of Applied Physics 97, 053702 (2005). 14 L. Donetti, F. Gamiz, and N. Rodriguez, Semiconductor Science and Technology 24, 035016 (2009). 15 M. V. Fischetti and S. E. Laux, Journal of Applied Physics 80, 2234 (1996). 16 F. Stern and W. E. Howard, Physical Review 163, 816 (1967). 17 Only in this case we do not impose self-consistency in our simulations; energy levels are com- puted for triangular well with varying electric field and for different quantization directions. 18 Y. Kajikawa, Journal of Applied Physics 106, 063712 (2009). 19 Y. Zhang, J. Kim, and M. Fischetti, Journal of Computational Electronics 7, 176 (2008). 20 E. Wang, P. Matagne, L. Shifren, B. Obradovic, R. Kotlyar, S. Cea, M. Stettler, and M. Giles, Electron Devices, IEEE Transactions on 53, 1840 (2006). 21 L. Donetti, F. G´amiz, N. Rodr´ıguez, F. Jim´enez-Molinos, and J. Rold´an, Solid-State Electronics 54, 191 (2010).
URI:	http://wrap.warwick.ac.uk/id/eprint/37794

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