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Low-frequency noise characterization of strained germanium pMOSFETs

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Simoen, E. (Eddy), Mitard, J., De Jaeger, B., Eneman, G., Dobbie, A. (Andrew), Myronov, Maksym, Whall, Terry E., Leadley, D. R. (David R.), Meuris, M., Hoffmann, T. and Claeys, C.. (2011) Low-frequency noise characterization of strained germanium pMOSFETs. IEEE Transactions on Electron Devices, Vol.58 (No.9). pp. 3132-3139. ISSN 0018-9383

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Official URL: http://dx.doi.org/10.1109/TED.2011.2160679

Abstract

Low-frequency noise in strained Ge epitaxial layers, which are grown on a reverse-graded relaxed SiGe buffer layer, has been evaluated for different front-end processing conditions. It has been shown that the 1/f noise in strong inversion is governed by trapping in the gate oxide (number fluctuations) and not affected by the presence of compressive strain in the channel. However, some impact has been found from the type of halo implantation used, whereby the lowest noise spectral density and the highest hole mobility are obtained by replacing the standard As halo by P implantation. At the same time, omitting the junction anneal results in poor device characteristics, which can be understood by considering the presence of a high density of nonannealed implantation damage in the channel and the gate stack near the source and the drain.

Item Type:	Journal Article
Subjects:	Q Science > QC Physics
Divisions:	Faculty of Science > Physics
Library of Congress Subject Headings (LCSH):	Germanium, Metal oxide semiconductor field-effect transistors
Journal or Publication Title:	IEEE Transactions on Electron Devices
Publisher:	I E E E
ISSN:	0018-9383
Official Date:	September 2011
Volume:	Vol.58
Number:	No.9
Page Range:	pp. 3132-3139
Identification Number:	10.1109/TED.2011.2160679
Status:	Peer Reviewed
Publication Status:	Published
Access rights to Published version:	Restricted or Subscription Access
Funder:	Engineering and Physical Sciences Research Council (EPSRC), Seventh Framework Programme (European Commission) (FP7)
Grant number:	EP/F031408/1 (EPSRC), 216171 (FP7)
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URI:	http://wrap.warwick.ac.uk/id/eprint/38489