Temperature behavior and modeling of ohmic contacts to Si+ implanted n-type GaN
Pérez-Tomás, Amador, Placidi, Marcel, Fontserè, A., Gammon, P. M. and Jennings, M. R.. (2011) Temperature behavior and modeling of ohmic contacts to Si+ implanted n-type GaN. Microelectronics Reliability, Vol.51 (No.8). pp. 1325-1329. ISSN 00262714Full text not available from this repository.
Official URL: http://dx.doi.org/10.1016/j.microrel.2011.03.023
The behavior of an ohmic contact to an implanted Si GaN n-well in the temperature range of 25-300 degrees C has been investigated. This is the sort of contact one would expect in many GaN based devices such as (source/drain) in a metal-oxide-semiconductor transistor. A low resistivity ohmic contact was achieved using the metal combination of Ti (350 angstrom)/Al (1150 angstrom) on a protected (SiO(2) cap) and unprotected samples during the post implantation annealing. Sheet resistance of the implanted layer and metal-semiconductor contact resistance to N(+) GaN have been extracted at different temperatures. Both, the experimental sheet resistance and the contact resistance decrease with the temperature and their characteristics are fitted by means of physical based models.
|Item Type:||Journal Article|
|Subjects:||T Technology > TA Engineering (General). Civil engineering (General)
T Technology > TK Electrical engineering. Electronics Nuclear engineering
|Divisions:||Faculty of Science > Engineering|
|Library of Congress Subject Headings (LCSH):||Ohmic contacts, Ohmic contacts -- Mathematical models, Gallium nitride, Silicon|
|Journal or Publication Title:||Microelectronics Reliability|
|Number of Pages:||5|
|Page Range:||pp. 1325-1329|
|Access rights to Published version:||Restricted or Subscription Access|
|Funder:||Spain. Ministerio de Ciencia e Innovación (MCINN)|
|Grant number:||TEC2008-05577/TEC (MCINN)|
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