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High-resolution x-ray diffraction investigation of relaxation and dislocations in SiGe layers grown on (001), (011), and (111) Si substrates
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Zhylik, Alexei, Benediktovich, A., Ulyanenkov, Alexander P., Guerault, H., Myronov, Maksym, Dobbie, A. (Andrew), Leadley, D. R. (David R.) and Ulyanenkova, Tatjana (2011) High-resolution x-ray diffraction investigation of relaxation and dislocations in SiGe layers grown on (001), (011), and (111) Si substrates. Journal of applied physics, 109 (12). 123714. doi:10.1063/1.3597828
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Official URL: http://dx.doi.org/10.1063/1.3597828
Abstract
This work presents a detailed characterization, using high-resolution x-ray diffraction, of multilayered Si(1-x)Ge(x) heterostructures grown on (001), (011), and (111) Si substrates by reduced pressure chemical vapor deposition. Reciprocal space mapping has been used to determine both the strain and Ge concentration depth profiles within each layer of the heterostructures after initially determining the crystallographic tilt of all the layers. Both symmetric and asymmetric reciprocal space maps were measured on each sample, and the evaluation was performed simultaneously for the whole data set. The ratio of misfit to threading dislocation densities has been estimated for each individual layer based on an analysis of diffuse x-ray scattering from the defects.
| Item Type: | Journal Article | ||||
|---|---|---|---|---|---|
| Subjects: | Q Science > QC Physics T Technology > TK Electrical engineering. Electronics Nuclear engineering |
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| Divisions: | Faculty of Science > Physics | ||||
| Library of Congress Subject Headings (LCSH): | X-rays -- Diffraction, Field-effect transistors, Heterostructures, Silicon alloys, Germanium alloys | ||||
| Journal or Publication Title: | Journal of applied physics | ||||
| Publisher: | American Institute of Physics | ||||
| ISSN: | 0021-8979 | ||||
| Official Date: | 15 June 2011 | ||||
| Dates: |
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| Volume: | 109 | ||||
| Number: | 12 | ||||
| Article Number: | 123714 | ||||
| DOI: | 10.1063/1.3597828 | ||||
| Status: | Peer Reviewed | ||||
| Publication Status: | Published | ||||
| Funder: | Engineering and Physical Sciences Research Council (EPSRC), Seventh Framework Programme (European Commission) (FP7) | ||||
| Grant number: | EP/F031408/1 (EPSRC), ICT-FP7 216171 (FP7) |
Data sourced from Thomson Reuters' Web of Knowledge
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