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Hetero-epitaxial crystal growth of CdTe on GaAs substrates
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Jiang, Q., Mullins, J. T., Toman, J., Hase, Thomas P. A., Cantwell, B. J., Lloyd, G., Basu, A. and Brinkman, A. W. (2008) Hetero-epitaxial crystal growth of CdTe on GaAs substrates. Journal of Crystal Growth, Vol.310 (No.7-9). pp. 1652-1656. doi:10.1016/j.jcrysgro.2007.11.171
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Official URL: http://dx.doi.org/10.1016/j.jcrysgro.2007.11.171
Abstract
This paper reports on the growth using a modified physical vapour transport technique of good epitaxial CdTe layers on GaAs(1 0 0), (1 1 1)A and (2 1 1)B substrates. FWHM values as low as 250 arcsec with growth rates of 10–20 μm/h were recorded for 20-μm-thick CdTe layers grown epitaxially on (1 1 1)A GaAs. The surface morphology of all the films was examined to measure the potential growth of high-quality thick films. Interfacial strain relaxation is studied by a combination of high-resolution X-ray diffraction (XRD) and etch profiling, which indicates that at a film thickness of ∼0.65 μm, there is an abrupt change in the mechanism. It implies that above this thickness, the strain energy has fallen below the threshold for dislocation formation.
| Item Type: | Journal Article | ||||
|---|---|---|---|---|---|
| Subjects: | Q Science > QC Physics Q Science > QD Chemistry |
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| Divisions: | Faculty of Science > Physics | ||||
| Library of Congress Subject Headings (LCSH): | Crystal growth, Epitaxy | ||||
| Journal or Publication Title: | Journal of Crystal Growth | ||||
| Publisher: | Elsevier BV, North-Holland | ||||
| ISSN: | 0022-0248 | ||||
| Official Date: | 2008 | ||||
| Dates: |
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| Volume: | Vol.310 | ||||
| Number: | No.7-9 | ||||
| Page Range: | pp. 1652-1656 | ||||
| DOI: | 10.1016/j.jcrysgro.2007.11.171 | ||||
| Status: | Peer Reviewed | ||||
| Publication Status: | Published |
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