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Hetero-epitaxial crystal growth of CdTe on GaAs substrates

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Jiang, Q., Mullins, J. T., Toman, J., Hase, Thomas P. A., Cantwell, B. J., Lloyd, G., Basu, A. and Brinkman, A. W.. (2008) Hetero-epitaxial crystal growth of CdTe on GaAs substrates. Journal of Crystal Growth, Vol.310 (No.7-9). pp. 1652-1656. ISSN 0022-0248

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Abstract

This paper reports on the growth using a modified physical vapour transport technique of good epitaxial CdTe layers on GaAs(1 0 0), (1 1 1)A and (2 1 1)B substrates. FWHM values as low as 250 arcsec with growth rates of 10–20 μm/h were recorded for 20-μm-thick CdTe layers grown epitaxially on (1 1 1)A GaAs. The surface morphology of all the films was examined to measure the potential growth of high-quality thick films. Interfacial strain relaxation is studied by a combination of high-resolution X-ray diffraction (XRD) and etch profiling, which indicates that at a film thickness of ∼0.65 μm, there is an abrupt change in the mechanism. It implies that above this thickness, the strain energy has fallen below the threshold for dislocation formation.

Item Type: Journal Article
Subjects: Q Science > QC Physics
Q Science > QD Chemistry
Divisions: Faculty of Science > Physics
Library of Congress Subject Headings (LCSH): Crystal growth, Epitaxy
Journal or Publication Title: Journal of Crystal Growth
Publisher: Elsevier BV, North-Holland
ISSN: 0022-0248
Official Date: 2008
Dates:
DateEvent
2008Published
Volume: Vol.310
Number: No.7-9
Page Range: pp. 1652-1656
Identification Number: 10.1016/j.jcrysgro.2007.11.171
Status: Peer Reviewed
Publication Status: Published
References:

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URI: http://wrap.warwick.ac.uk/id/eprint/39719

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