Jiang, Q., Mullins, J. T., Toman, J., Hase, Thomas P. A., Cantwell, B. J., Lloyd, G., Basu, A. and Brinkman, A. W.. (2008) Hetero-epitaxial crystal growth of CdTe on GaAs substrates. Journal of Crystal Growth, Vol.310 (No.7-9). pp. 1652-1656. ISSN 0022-0248

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Abstract

This paper reports on the growth using a modified physical vapour transport technique of good epitaxial CdTe layers on GaAs(1 0 0), (1 1 1)A and (2 1 1)B substrates. FWHM values as low as 250 arcsec with growth rates of 10–20 μm/h were recorded for 20-μm-thick CdTe layers grown epitaxially on (1 1 1)A GaAs. The surface morphology of all the films was examined to measure the potential growth of high-quality thick films. Interfacial strain relaxation is studied by a combination of high-resolution X-ray diffraction (XRD) and etch profiling, which indicates that at a film thickness of ∼0.65 μm, there is an abrupt change in the mechanism. It implies that above this thickness, the strain energy has fallen below the threshold for dislocation formation.

Item Type:	Journal Article
Subjects:	Q Science > QC Physics Q Science > QD Chemistry
Divisions:	Faculty of Science > Physics
Library of Congress Subject Headings (LCSH):	Crystal growth, Epitaxy
Journal or Publication Title:	Journal of Crystal Growth
Publisher:	Elsevier BV, North-Holland
ISSN:	0022-0248
Date:	2008
Volume:	Vol.310
Number:	No.7-9
Page Range:	pp. 1652-1656
Identification Number:	10.1016/j.jcrysgro.2007.11.171
Status:	Peer Reviewed
Publication Status:	Published
References:	[1] P. Sellin, J. Vaikus, Nucl. Instr. and Meth. Phys. Res. A 557 (2006) 479. [2] R.C. Bean, K.R. Zanio, K.A. Kay, J.M. Wright, E.J. Saller, J. Vac. Sci. Tech. A 4 (1986) 2153. [3] K. Yasuda, M. Niraula, T. Ishigura, Y.K. Awauchi, Jpn. J. Appl. Phys. 41 (2002) 1109. [4] H. Tatsuoka, H.K. uwabara, Y. Nakanishi, H. Fujiyasu, J. Appl. Phys. 67 (1990) 65. [5] J.T. Mullins, J. Carles, N.M. Aitken, A.W. Brinkman, J. Crystal Growth 208 (2000) 211. [6] J.T. Mullins, B.J. Cantwell, A. Basu, Q. Jiang, A. Choubey, A.W. Brinkman, Crystal growth of large diameter bulk CdTe on GaAs wafer seed plates, J. Crystal Growth, this issue, doi:10.1016/ j.jcrysgro.2007.11.190. [7] K.A. Jones, J. Vac. Sci. Tech. A 19 (1981) 578. [8] A. Tromson-Carli, G. Patriarchi, R. Druilhe, A. Lusson, Y. Marfaing, R. Triboulet, P.D. Brown, A.W. Brinkman, Mater. Sci. Eng. B 16 (1993) 145. [9] H. Nishino, Y. Nishijima, J. Crystal Growth 173 (1997) 330. [10] J.E. Ayers, S.K. Ghandhi, J. Crystal Growth 113 (1991) 430. [11] K. Durose, A. Turnbull, P. Brown, Mater. Sci. Eng. B 16 (1993) 96. [12] H.L. Hartnagel, R. Riemanschneider, Themal oxides in GaAs/ properties of gallium arsenide, in: M.R. Brozel, G.E. Stillman (Eds.), INSPEC, Herts, UK, 1997. [13] J.M. Ballingall, M.L. Wroge, D.J. Leopold, Appl. Phys. Lett. 48 (1986) 1273. [14] R. Korenstein, B. MaCleod, J. Crystal Growth 86 (1988) 382. [15] G. Cohen-Solal, F. Bailly, M. Barbe, Appl. Phys. Lett. 49 (1986) 1519. [16] S.J. Change, M.A. Kellzel, K.L. Wang, R.C. Bowman, P. Chow, J. Appl. Phys. 64 (1988) 3634. [17] H. Tatsuoka, H. Kuwabara, Y. Nakanishi, H. Fujiyasu, J. Crystal Growth 117 (1992) 554. [18] D.J. Olego, K. Shahzad, D.A. Cammack, H. Cornelissen, Phys. Rev. B 38 (1988) 5554.
URI:	http://wrap.warwick.ac.uk/id/eprint/39719

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