The Library
InAs wetting layer and quantum dots on GaAs(001) surface studied by in situ STM placed inside MBE growth chamber and kMC simulations based on first-principles calculations
Tools
Tsukamoto, Shiro, Bell, Gavin R., Ishii, Akira and Arakawa, Yasuhiko (2007) InAs wetting layer and quantum dots on GaAs(001) surface studied by in situ STM placed inside MBE growth chamber and kMC simulations based on first-principles calculations. AIP Conference Proceedings, Vol.893 (No.1). pp. 101-102. doi:10.1063/1.2729790 ISSN 0094-243X.
Research output not available from this repository.
Request-a-Copy directly from author or use local Library Get it For Me service.
Official URL: http://dx.doi.org/10.1063/1.2729790
Abstract
Dynamic images of InAs quantum dots (QDs) formation are obtained using a unique scanning tunneling microscope (STM) placed within the growth chamber. These images are interpreted with the aid of kinetic Monte Carlo (kMC) simulations of the QD nucleation process. Alloy fluctuations in the InGaAs wetting layer prior to QD formation assist in the nucleation of stable InAs islands containing tens of atoms which grow extremely rapidly to form QDs. Furthermore, not all deposited In is initially incorporated into the lattice, providing a large supply of material to rapidly form QDs at the critical thickness. ©2007 American Institute of Physics
Item Type: | Journal Article | ||||
---|---|---|---|---|---|
Subjects: | Q Science > QA Mathematics Q Science > QC Physics |
||||
Divisions: | Faculty of Science, Engineering and Medicine > Science > Physics | ||||
Library of Congress Subject Headings (LCSH): | Quantum dots, Scanning tunneling microscopy, Monte Carlo method | ||||
Journal or Publication Title: | AIP Conference Proceedings | ||||
Publisher: | American Institute of Physics | ||||
ISSN: | 0094-243X | ||||
Official Date: | 10 April 2007 | ||||
Dates: |
|
||||
Volume: | Vol.893 | ||||
Number: | No.1 | ||||
Page Range: | pp. 101-102 | ||||
DOI: | 10.1063/1.2729790 | ||||
Status: | Peer Reviewed | ||||
Publication Status: | Published | ||||
Access rights to Published version: | Restricted or Subscription Access | ||||
Description: | Conference proceedings of 28th International Conference on the Physics of Semiconductors - ICPS 2006 |
||||
Conference Paper Type: | Paper | ||||
Type of Event: | Conference |
Request changes or add full text files to a record
Repository staff actions (login required)
View Item |