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InAs wetting layer and quantum dots on GaAs(001) surface studied by in situ STM placed inside MBE growth chamber and kMC simulations based on first-principles calculations

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Tsukamoto, Shiro, Bell, Gavin R., Ishii, Akira and Arakawa, Yasuhiko (2007) InAs wetting layer and quantum dots on GaAs(001) surface studied by in situ STM placed inside MBE growth chamber and kMC simulations based on first-principles calculations. AIP Conference Proceedings, Vol.893 (No.1). pp. 101-102. doi:10.1063/1.2729790

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Official URL: http://dx.doi.org/10.1063/1.2729790

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Abstract

Dynamic images of InAs quantum dots (QDs) formation are obtained using a unique scanning tunneling microscope (STM) placed within the growth chamber. These images are interpreted with the aid of kinetic Monte Carlo (kMC) simulations of the QD nucleation process. Alloy fluctuations in the InGaAs wetting layer prior to QD formation assist in the nucleation of stable InAs islands containing tens of atoms which grow extremely rapidly to form QDs. Furthermore, not all deposited In is initially incorporated into the lattice, providing a large supply of material to rapidly form QDs at the critical thickness. ©2007 American Institute of Physics

Item Type: Journal Article
Subjects: Q Science > QA Mathematics
Q Science > QC Physics
Divisions: Faculty of Science > Physics
Library of Congress Subject Headings (LCSH): Quantum dots, Scanning tunneling microscopy, Monte Carlo method
Journal or Publication Title: AIP Conference Proceedings
Publisher: American Institute of Physics
ISSN: 0094-243X
Official Date: 10 April 2007
Dates:
DateEvent
10 April 2007Published
Volume: Vol.893
Number: No.1
Page Range: pp. 101-102
DOI: 10.1063/1.2729790
Status: Peer Reviewed
Publication Status: Published
Access rights to Published version: Restricted or Subscription Access
Description:

Conference proceedings of 28th International Conference on the Physics of Semiconductors - ICPS 2006

Conference Paper Type: Paper
Type of Event: Conference

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