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Modulation of the absorption coefficient at 13 μm in Ge/SiGe multiple quantum well heterostructures on silicon
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Lever, L., Hu, Youfang, Myronov, M., Liu, Xianping, Owens, N. (Nathan), Gardes, F. Y., Marko, I. P., Sweeney, S. J., Ikonić, Z., Leadley, D. R. (David R.), Reed, G. T. and Kelsall, Robert W.. (2011) Modulation of the absorption coefficient at 13 μm in Ge/SiGe multiple quantum well heterostructures on silicon. Optics Letters, Vol.36 (No.21). pp. 4158-4160. ISSN 0146-9592
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Official URL: http://dx.doi.org/10.1364/OL.36.004158
Abstract
We report modulation of the absorption coefficient at 1.3 μm in Ge/SiGe multiple quantum well heterostructures on silicon via the quantum-confined Stark effect. Strain engineering was exploited to increase the direct optical bandgap in the Ge quantum wells. We grew 9 nm-thick Ge quantum wells on a relaxed Si0.22Ge0.78 buffer and a contrast in the absorption coefficient of a factor of greater than 3.2 was achieved in the spectral range 1290–1315 nm.
| Item Type: | Journal Article |
|---|---|
| Subjects: | Q Science > QC Physics T Technology > TK Electrical engineering. Electronics Nuclear engineering |
| Divisions: | Faculty of Science > Engineering Faculty of Science > Physics |
| Library of Congress Subject Headings (LCSH): | Alloys, Adsorption, Heterostructures, Silicon, Germanium |
| Journal or Publication Title: | Optics Letters |
| Publisher: | Optical Society of America |
| ISSN: | 0146-9592 |
| Date: | 19 October 2011 |
| Volume: | Vol.36 |
| Number: | No.21 |
| Page Range: | pp. 4158-4160 |
| Identification Number: | 10.1364/OL.36.004158 |
| Status: | Peer Reviewed |
| Publication Status: | Published |
| Access rights to Published version: | Restricted or Subscription Access |
| URI: | http://wrap.warwick.ac.uk/id/eprint/39743 |
Data sourced from Thomson Reuters' Web of Knowledge
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