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Reverse graded strain relaxed SiGe buffers for CMOS and optoelectronic integration
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Shah, V. A., Dobbie, A. (Andrew), Myronov, Maksym and Leadley, D. R. (David R.) (2012) Reverse graded strain relaxed SiGe buffers for CMOS and optoelectronic integration. Thin Solid Films, Vol.520 (No.8). pp. 3227-3231. doi:10.1016/j.tsf.2011.10.102 ISSN 0040-6090.
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Official URL: http://dx.doi.org/10.1016/j.tsf.2011.10.102
Abstract
Reverse terrace graded buffers are proposed for high quality high Ge content Si0.23Ge0.77 buffers. The buffer structure allows the effects of applied thermal budget and grading rate to be separated and compared to previously reported reverse linearly graded virtual substrates. A reduction in threading dislocation density to 2.1 × 106 cm− 2 and an enhanced relaxation is found for these terrace graded structures of almost identical thickness and twice the strain gradient of the linear graded structures, whilst a smooth surface is retained with an rms roughness of just 1.9 nm.
Item Type: | Journal Article | ||||
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Subjects: | Q Science > QD Chemistry T Technology > TK Electrical engineering. Electronics Nuclear engineering |
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Divisions: | Faculty of Science, Engineering and Medicine > Science > Physics | ||||
Library of Congress Subject Headings (LCSH): | Silicon, Germanium, Metal oxide semiconductors, Complementary, Chemical vapor deposition, Optoelectronics | ||||
Journal or Publication Title: | Thin Solid Films | ||||
Publisher: | Elsevier S.A. | ||||
ISSN: | 0040-6090 | ||||
Official Date: | February 2012 | ||||
Dates: |
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Volume: | Vol.520 | ||||
Number: | No.8 | ||||
Page Range: | pp. 3227-3231 | ||||
DOI: | 10.1016/j.tsf.2011.10.102 | ||||
Status: | Peer Reviewed | ||||
Publication Status: | Published | ||||
Access rights to Published version: | Restricted or Subscription Access |
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