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Acoustic studies of ac conductivity mechanisms in n-GaAs/Al_{x}Ga_{1-x}As in the integer and fractional quantum Hall effect regime

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Drichko, I. L., Smirnov, I. Yu., Suslov, A. V. and Leadley, D. R. (David R.) (2011) Acoustic studies of ac conductivity mechanisms in n-GaAs/Al_{x}Ga_{1-x}As in the integer and fractional quantum Hall effect regime. Physical Review B (Condensed Matter and Materials Physics), Vol.83 (No.23). article no. 235318 . doi:10.1103/PhysRevB.83.235318

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Official URL: http://dx.doi.org/10.1103/PhysRevB.83.235318

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Abstract

For the heterostructure n-GaAs/AlxGa1-xAs with a sheet density n=2×1011cm-2 and mobility μ≈2×106 cm2/V s with integer and fractional quantum Hall effects (IQHE and FQHE, respectively) we demonstrate the wide applicability of acoustic methods for determining the general conduction parameters of a two-dimensional electron gas. We also examine the mechanisms of low-temperature conductivity in the minima of oscillations of high-frequency conductivity in the IQHE and FQHE regimes. In the magnetic field region where electrons are delocalized, the parameters determined by the acoustic technique do not differ from those determined by a direct current. However, the acoustic measurements do not require Hall bars and electrical contacts to be fabricated. In the minima of IQHE and FQHE oscillations, electrons are localized, and ac conductivity occurs via hopping. An analysis of the high-frequency conductivity in the QHE regime has been carried out within a “two-site” model. Furthermore, measurements of acoustoelectric effects in a tilted magnetic field were used to determine how the activation energy of the ν=2/3 fractional quantum Hall effect gap varies with magnetic field.

Item Type: Journal Article
Subjects: Q Science > QC Physics
Divisions: Faculty of Science > Physics
Library of Congress Subject Headings (LCSH): Quantum Hall effect, Landau levels, Heterostructures, Electrons, Electron gas
Journal or Publication Title: Physical Review B (Condensed Matter and Materials Physics)
Publisher: American Physical Society
ISSN: 1098-0121
Official Date: 2011
Dates:
DateEvent
2011Published
Volume: Vol.83
Number: No.23
Number of Pages: 10
Page Range: article no. 235318
DOI: 10.1103/PhysRevB.83.235318
Status: Peer Reviewed
Publication Status: Published
Funder: Prezidium RAN, National Science Foundation (U.S.) (NSF), Florida, United States. Dept. of Energy
Grant number: RFBR 11-02-00223 (Prezidium RAN), DMR-0654118 (NSF),

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