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Strain dependence of electron-phonon energy loss rate in many-valley semiconductors

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Muhonen, Juha, Prest, M. J. (Martin J.), Prunnila, Mika, Gunnarsson, David, Shah, V. A., Dobbie, A. (Andrew), Myronov, Maksym, Morris, R. J. H. (Richard J. H.), Whall, Terry E., Parker, Evan H. C. and Leadley, D. R. (David R.) (2011) Strain dependence of electron-phonon energy loss rate in many-valley semiconductors. Applied Physics Letters, Vol.98 (No.18). p. 182103. doi:10.1063/1.3579524

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Official URL: http://dx.doi.org/10.1063/1.3579524

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Abstract

We demonstrate significant modification of the electron-phonon energy loss rate in a many-valley semiconductor system due to lattice mismatch induced strain. We show that the thermal conductance from the electron system to the phonon bath in strained n+Si, at phonon temperatures between 200 and 480 mK, is more than an order of magnitude lower than that for a similar unstrained sample.

Item Type: Journal Article
Subjects: Q Science > QC Physics
Divisions: Faculty of Science > Physics
Library of Congress Subject Headings (LCSH): Semiconductors, Electron-phonon interactions, Energy dissipation
Journal or Publication Title: Applied Physics Letters
Publisher: American Institute of Physics
ISSN: 0003-6951
Official Date: 2 May 2011
Dates:
DateEvent
2 May 2011Published
Volume: Vol.98
Number: No.18
Page Range: p. 182103
DOI: 10.1063/1.3579524
Status: Peer Reviewed
Publication Status: Published
Access rights to Published version: Restricted or Subscription Access
Funder: Engineering and Physical Sciences Research Council (EPSRC), Seventh Framework Programme (European Commission) (FP7/2007-2013)
Grant number: EP/F040784/1 (EPSRC), 216176 (FP7), 256959 (FP7), 257375 (FP7), 228464 (FP&)

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