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High-resolution reciprocal space mapping of distributed Bragg reflectors and virtual substrates

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Zhylik, A., Rinaldi, F., Myronov, Maksym, Saito, K., Menzel, S., Dobbie, A. (Andrew), Leadley, D. R. (David R.), Ulyanenkova, T., Feranchuk, I. D. (Ilya D.) and Ulyanenkov, Alexander P. (2011) High-resolution reciprocal space mapping of distributed Bragg reflectors and virtual substrates. Physica Status Solidi. A: Applications and Materials Science , Vol.208 (No.11). pp. 2582-2586. doi:10.1002/pssa.201184260

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Official URL: http://dx.doi.org/10.1002/pssa.201184260

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Abstract

Epitaxially grown silicon germanium alloy layers, prepared as virtual substrates for modulation-doped field effect transistors, and InxGa1−xAs and GaPxAs1−x graded layers on GaAs substrates prepared as distributed Bragg reflectors (DBRs), have been investigated by the reciprocal space mapping (RSM) technique. These structures possess a strong concentration gradient and crystallographic lattice relaxation across the layer, which makes the data analysis challenging. Using kinematic diffraction theory for RSM analysis gives a rather simple way to evaluate the concentration, tilt and relaxation gradients, and the layer thicknesses, as well as the dependence of these values on the azimuthal direction of the diffraction plane. The density of 60° misfit dislocations for partially relaxed layers is also estimated. Characteristics of wide aperture Bragg reflectors based on these structures are calculated.

Item Type: Journal Article
Subjects: Q Science > QC Physics
T Technology > TK Electrical engineering. Electronics Nuclear engineering
Divisions: Faculty of Science > Physics
Library of Congress Subject Headings (LCSH): Alloys, Germanium, Silicon, Field-effect transistors
Journal or Publication Title: Physica Status Solidi. A: Applications and Materials Science
Publisher: Wiley - V C H Verlag GmbH & Co. KGaA
ISSN: 1862-6300
Official Date: 2011
Dates:
DateEvent
2011Published
Volume: Vol.208
Number: No.11
Page Range: pp. 2582-2586
DOI: 10.1002/pssa.201184260
Status: Peer Reviewed
Publication Status: Published

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