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High hole mobility in 65 nm strained Ge p-Channel field effect transistors with HfO2Gate dielectric
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(2011) High hole mobility in 65 nm strained Ge p-Channel field effect transistors with HfO2Gate dielectric. Japanese Journal of Applied Physics, Vol.50 (No.4). article no. 04DC17. doi:10.1143/JJAP.50.04DC17 ISSN 0021-4922.
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Official URL: http://dx.doi.org/10.1143/JJAP.50.04DC17
Abstract
Biaxially-strained Ge p-channel field effect transistors (pFETs) have been fabricated for the first time in a 65 nm technology. The devices are designed to have a reduced effective oxide thickness (EOT) while maintaining minimized short channel effects. Low and high field transport has been studied by in-depth electrical characterization, showing a high hole-mobility that is enhanced by up to 70% in the strained devices. The important role of pocket implants in degrading the drive current is highlighted. Using a judicious implantation scheme, we demonstrate a significant gain in on-current (up to 35%) for nanoscaled strained Ge pFETs. Simultaneous optimization of the gate metal and dielectric, together with the corresponding uniaxial stress engineering, is identified as a promising path for further performance enhancement.
| Item Type: | Journal Article | ||||
|---|---|---|---|---|---|
| Subjects: | Q Science > QC Physics T Technology > TK Electrical engineering. Electronics Nuclear engineering |
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| Divisions: | Faculty of Science, Engineering and Medicine > Science > Physics | ||||
| Library of Congress Subject Headings (LCSH): | Field-effect transistors, Strains and stresses | ||||
| Journal or Publication Title: | Japanese Journal of Applied Physics | ||||
| Publisher: | Japan Society of Applied Physics | ||||
| ISSN: | 0021-4922 | ||||
| Official Date: | 2011 | ||||
| Dates: |
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| Volume: | Vol.50 | ||||
| Number: | No.4 | ||||
| Page Range: | article no. 04DC17 | ||||
| DOI: | 10.1143/JJAP.50.04DC17 | ||||
| Status: | Peer Reviewed | ||||
| Publication Status: | Published | ||||
| Funder: | Engineering and Physical Sciences Research Council (EPSRC), Seventh Framework Programme (European Commission) (FP7/2007-2013) | ||||
| Grant number: | EP/F031408/1 (EPSRC), 216171 (FP7) |
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