. (2011) High hole mobility in 65 nm strained Ge p-Channel field effect transistors with HfO2Gate dielectric. Japanese Journal of Applied Physics, Vol.50 (No.4). article no. 04DC17. ISSN 0021-4922

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Abstract

Biaxially-strained Ge p-channel field effect transistors (pFETs) have been fabricated for the first time in a 65 nm technology. The devices are designed to have a reduced effective oxide thickness (EOT) while maintaining minimized short channel effects. Low and high field transport has been studied by in-depth electrical characterization, showing a high hole-mobility that is enhanced by up to 70% in the strained devices. The important role of pocket implants in degrading the drive current is highlighted. Using a judicious implantation scheme, we demonstrate a significant gain in on-current (up to 35%) for nanoscaled strained Ge pFETs. Simultaneous optimization of the gate metal and dielectric, together with the corresponding uniaxial stress engineering, is identified as a promising path for further performance enhancement.

Item Type:	Journal Article
Subjects:	Q Science > QC Physics T Technology > TK Electrical engineering. Electronics Nuclear engineering
Divisions:	Faculty of Science > Physics
Library of Congress Subject Headings (LCSH):	Field-effect transistors, Strains and stresses
Journal or Publication Title:	Japanese Journal of Applied Physics
Publisher:	Japan Society of Applied Physics
ISSN:	0021-4922
Date:	2011
Volume:	Vol.50
Number:	No.4
Page Range:	article no. 04DC17
Identification Number:	10.1143/JJAP.50.04DC17
Status:	Peer Reviewed
Publication Status:	Published
Funder:	Engineering and Physical Sciences Research Council (EPSRC), Seventh Framework Programme (European Commission) (FP7/2007-2013)
Grant number:	EP/F031408/1 (EPSRC), 216171 (FP7)
URI:	http://wrap.warwick.ac.uk/id/eprint/39750

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