High hole mobility in 65 nm strained Ge p-Channel field effect transistors with HfO2Gate dielectric
. (2011) High hole mobility in 65 nm strained Ge p-Channel field effect transistors with HfO2Gate dielectric. Japanese Journal of Applied Physics, Vol.50 (No.4). article no. 04DC17. ISSN 0021-4922 Full text not available from this repository.
Official URL: http://dx.doi.org/10.1143/JJAP.50.04DC17
Biaxially-strained Ge p-channel field effect transistors (pFETs) have been fabricated for the first time in a 65 nm technology. The devices are designed to have a reduced effective oxide thickness (EOT) while maintaining minimized short channel effects. Low and high field transport has been studied by in-depth electrical characterization, showing a high hole-mobility that is enhanced by up to 70% in the strained devices. The important role of pocket implants in degrading the drive current is highlighted. Using a judicious implantation scheme, we demonstrate a significant gain in on-current (up to 35%) for nanoscaled strained Ge pFETs. Simultaneous optimization of the gate metal and dielectric, together with the corresponding uniaxial stress engineering, is identified as a promising path for further performance enhancement.
|Item Type:||Journal Article|
|Subjects:||Q Science > QC Physics
T Technology > TK Electrical engineering. Electronics Nuclear engineering
|Divisions:||Faculty of Science > Physics|
|Library of Congress Subject Headings (LCSH):||Field-effect transistors, Strains and stresses|
|Journal or Publication Title:||Japanese Journal of Applied Physics|
|Publisher:||Japan Society of Applied Physics|
|Page Range:||article no. 04DC17|
|Funder:||Engineering and Physical Sciences Research Council (EPSRC), Seventh Framework Programme (European Commission) (FP7/2007-2013)|
|Grant number:||EP/F031408/1 (EPSRC), 216171 (FP7)|
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