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Effect of layer thickness on structural quality of Ge epilayers grown directly on Si(001)
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Shah, V. A., Dobbie, A. (Andrew), Myronov, Maksym and Leadley, D. R. (David R.) (2011) Effect of layer thickness on structural quality of Ge epilayers grown directly on Si(001). Thin Solid Films, Vol.519 (No.22). pp. 7911-7917. doi:10.1016/j.tsf.2011.06.022 ISSN 0040-6090.
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Official URL: http://dx.doi.org/10.1016/j.tsf.2011.06.022
Abstract
A study of Ge epilayer growth directly on a Si(001) substrate is presented, following the two temperature Ge layer method. In an attempt to minimize the overall thickness while maintaining a good quality Ge epilayer, we have investigated the effect of varying the thickness of both the low and high temperature Ge layers, grown at 400 °C and 670 °C, respectively, by reduced pressure chemical vapor deposition. We find that the surface of the low temperature (LT) seed layer has a threading dislocation density (TDD) to the order of 1011 cm− 2. On increasing the LT layer thickness from 30 nm to 150 nm this TDD decreases by a factor of 2, while its roughness doubles and degree of relaxation increases from 82% to 96%. Growth of the high temperature (HT) layer reduces the TDD level to around 108 cm− 2, which is also shown to decrease with increasing layer thickness. Both the surface roughness and degree of relaxation reach stable values for which increasing the thickness beyond about 700 nm has no effect. Finally, annealing the HT layer is shown to reduce the TDD, without affecting the degree of relaxation. However, unless a thick structure is used the surface roughness increases significantly on annealing.
Item Type: | Journal Article | ||||
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Subjects: | Q Science > QC Physics T Technology > TA Engineering (General). Civil engineering (General) |
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Divisions: | Faculty of Science, Engineering and Medicine > Science > Physics | ||||
Library of Congress Subject Headings (LCSH): | Germanium, Silicon, Chemical vapor deposition, Surface roughness | ||||
Journal or Publication Title: | Thin Solid Films | ||||
Publisher: | Elsevier S.A. | ||||
ISSN: | 0040-6090 | ||||
Official Date: | 2011 | ||||
Dates: |
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Volume: | Vol.519 | ||||
Number: | No.22 | ||||
Page Range: | pp. 7911-7917 | ||||
DOI: | 10.1016/j.tsf.2011.06.022 | ||||
Status: | Peer Reviewed | ||||
Publication Status: | Published | ||||
Funder: | Engineering and Physical Sciences Research Council (EPSRC), Seventh Framework Programme (European Commission) (FP7) | ||||
Grant number: | EP/F031408/1 (EPSRC), EP/E065317/1 (EPSRC), EP/F040784/1 (EPSRC) |
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