Norris, D. J., Walther, T. (Thomas), Cullis, A. G., Myronov, Maksym, Dobbie, A. (Andrew), Whall, Terry E., Parker, Evan H. C., Leadley, D. R. (David R.), Jaeger, B. De., Lee, W., Meuris, Marc, Watling, J. R. and Asenov, A. (Asen) (2010) TEM analysis of Ge-on-Si MOSFET structures with HfO2dielectric for high performance PMOS device technology. Journal of Physics : Conference Series, Vol.209 . article no. 012061. doi:10.1088/1742-6596/209/1/012061

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Abstract

In this paper, we present a (scanning) transmission electron microscopy analysis of novel Ge-on-Si MOSFETs which incorporate a high-k HfO2 dielectric and TaN/TiN metal gate electrodes. A key feature of these devices is the incorporation of a very thin (~1nm) Si passivation layer on top of the Ge virtual substrate, which is partially oxided to form SiO2 (~0.5nm), before depositing the HfO2 dielectric and TaN and TiN metal gate electrodes. Our results confirm the architecture of the device structures and the existence of Si passivation.

Item Type:	Journal Article
Subjects:	Q Science > QC Physics
Divisions:	Faculty of Science > Physics
Library of Congress Subject Headings (LCSH):	Metal oxide semiconductor field-effect transistors, Silicon alloys, Germanium alloys, Transmission electron microscopy
Journal or Publication Title:	Journal of Physics : Conference Series
Publisher:	Institute of Physics Publishing Ltd.
ISSN:	1742-6596
Official Date:	2010
Dates:	Date Event 2010 Published
Volume:	Vol.209
Page Range:	article no. 012061
DOI:	10.1088/1742-6596/209/1/012061
Status:	Peer Reviewed
Publication Status:	Published
Funder:	Engineering and Physical Sciences Research Council (EPSRC)
Grant number:	EP/F033893/1 (EPSRC)

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