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TEM analysis of Ge-on-Si MOSFET structures with HfO2dielectric for high performance PMOS device technology
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Norris, D. J., Walther, T. (Thomas), Cullis, A. G., Myronov, Maksym, Dobbie, A. (Andrew), Whall, Terry E., Parker, Evan H. C., Leadley, D. R. (David R.), Jaeger, B. De., Lee, W., Meuris, Marc, Watling, J. R. and Asenov, A. (Asen) (2010) TEM analysis of Ge-on-Si MOSFET structures with HfO2dielectric for high performance PMOS device technology. Journal of Physics : Conference Series, Vol.209 . article no. 012061. doi:10.1088/1742-6596/209/1/012061
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Official URL: http://dx.doi.org/10.1088/1742-6596/209/1/012061
Abstract
In this paper, we present a (scanning) transmission electron microscopy analysis of novel Ge-on-Si MOSFETs which incorporate a high-k HfO2 dielectric and TaN/TiN metal gate electrodes. A key feature of these devices is the incorporation of a very thin (~1nm) Si passivation layer on top of the Ge virtual substrate, which is partially oxided to form SiO2 (~0.5nm), before depositing the HfO2 dielectric and TaN and TiN metal gate electrodes. Our results confirm the architecture of the device structures and the existence of Si passivation.
Item Type: | Journal Article | ||||
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Subjects: | Q Science > QC Physics | ||||
Divisions: | Faculty of Science > Physics | ||||
Library of Congress Subject Headings (LCSH): | Metal oxide semiconductor field-effect transistors, Silicon alloys, Germanium alloys, Transmission electron microscopy | ||||
Journal or Publication Title: | Journal of Physics : Conference Series | ||||
Publisher: | Institute of Physics Publishing Ltd. | ||||
ISSN: | 1742-6596 | ||||
Official Date: | 2010 | ||||
Dates: |
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Volume: | Vol.209 | ||||
Page Range: | article no. 012061 | ||||
DOI: | 10.1088/1742-6596/209/1/012061 | ||||
Status: | Peer Reviewed | ||||
Publication Status: | Published | ||||
Funder: | Engineering and Physical Sciences Research Council (EPSRC) | ||||
Grant number: | EP/F033893/1 (EPSRC) |
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