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TEM analysis of Si-passivated Ge-on-Si MOSFET structures for high performance PMOS device technology
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Norris, D. J., Ross, I. M., Cullis, A. G., Walther, T. (Thomas), Myronov, Maksym, Dobbie, A. (Andrew), Whall, Terry E., Parker, Evan H. C., Leadley, D. R. (David R.), Jaeger, B. De., Lee, W. C. and Meuris, Marc (2010) TEM analysis of Si-passivated Ge-on-Si MOSFET structures for high performance PMOS device technology. Journal of Physics : Conference Series, Vol.241 . article no. 012044. doi:10.1088/1742-6596/241/1/012044 ISSN 1742-6596.
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Official URL: http://dx.doi.org/10.1088/1742-6596/241/1/012044
Abstract
In this paper, we present a transmission electron microscopy analysis of novel Ge-on-Si MOSFETs using a JEOL 2010F and an aberration-corrected JEOL 2200FSC. A key feature of these devices is the incorporation of a very thin (~1nm) Si passivation layer on top of the Ge virtual substrate, which is partially oxidised to form SiO2 (~0.5nm) prior to depositing HfO2 dielectric. We will show that the thin SiO2 layer is not purely amorphous but has some degree of crystal ordering due to being bonded to crystalline materials. Moreover, we will examine the presence of small monolayer variation in Si/SiO2 interface roughness.
Item Type: | Journal Article | ||||
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Subjects: | Q Science > QC Physics | ||||
Divisions: | Faculty of Science, Engineering and Medicine > Science > Physics | ||||
Library of Congress Subject Headings (LCSH): | Metal oxide semiconductor field-effect transistors, Silicon, Germanium, Transmission electron microscopy | ||||
Journal or Publication Title: | Journal of Physics : Conference Series | ||||
Publisher: | Institute of Physics Publishing Ltd. | ||||
ISSN: | 1742-6596 | ||||
Official Date: | 2010 | ||||
Dates: |
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Volume: | Vol.241 | ||||
Page Range: | article no. 012044 | ||||
DOI: | 10.1088/1742-6596/241/1/012044 | ||||
Status: | Peer Reviewed | ||||
Publication Status: | Published | ||||
Description: | Proceedings of Electron Microscopy and Analysis Group Conference 2009 (EMAG 2009) |
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Funder: | Engineering and Physical Sciences Research Council (EPSRC) | ||||
Grant number: | EP/F033893/1 (EPSRC) |
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