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Accuracy of thickness measurement for Ge epilayers grown on SiGe/Ge/Si(100) heterostructure by x-ray diffraction and reflectivity

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Liu, Xue-Chao, Myronov, Maksym, Dobbie, A. (Andrew), Nguyen, Van H. and Leadley, D. R. (David R.) (2011) Accuracy of thickness measurement for Ge epilayers grown on SiGe/Ge/Si(100) heterostructure by x-ray diffraction and reflectivity. Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, Vol.29 (No.1). 011010. doi:10.1116/1.3530594 ISSN 1071-1023.

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Official URL: http://dx.doi.org/10.1116/1.3530594

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Abstract

High-resolution x-ray diffraction rocking curve (RC), x-ray reflectivity (XRR), and transmission electron microscopy (TEM) were used to characterize strained Ge epilayers grown on relaxed SiGe/Ge/Si(100) virtual substrates by reduced pressure chemical vapor deposition. The investigation focused on the reliability and accuracy of thickness measurement by these different techniques. The authors found that both XRR and RC could give reliable values that agree well with TEM results over a wide range of Ge epilayer thicknesses. The best-fit thickness from both XRR and RC is within ±5% of the TEM measurement for a thickness in the range of 10–120 nm, with XRR producing more accurate values than RC. However, neither RC nor XRR could give reliable results for very thin Ge epilayers (<7 nm) because of the complicated heterostructure and interface/surface quality. Agreement is also not as good for the thickest Ge epilayers (>122 nm) due to surface roughening caused by strain relaxation

Item Type: Journal Article
Subjects: Q Science > QC Physics
Divisions: Faculty of Science, Engineering and Medicine > Science > Physics
Library of Congress Subject Headings (LCSH): Heterostructures, Silicon, Germanium, X-rays -- Diffraction, Thickness measurement
Journal or Publication Title: Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures
Publisher: American Institute of Physics
ISSN: 1071-1023
Official Date: January 2011
Dates:
DateEvent
January 2011Published
Volume: Vol.29
Number: No.1
Page Range: 011010
DOI: 10.1116/1.3530594
Status: Peer Reviewed
Publication Status: Published
Access rights to Published version: Restricted or Subscription Access
Funder: Engineering and Physical Sciences Research Council (EPSRC)
Grant number: EP/E065317/1 (EPSRC), EP/F031408/1 (EPSRC)

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