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Highly strained Si epilayers grown on SiGe/Si(100) virtual substrate by reduced pressure chemical vapour deposition
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Myronov, Maksym, Shah, V. A., Dobbie, A. (Andrew), Liu, Xue-Chao, Nguyen, Van H., Leadley, D. R. (David R.) and Parker, Evan H. C. (2010) Highly strained Si epilayers grown on SiGe/Si(100) virtual substrate by reduced pressure chemical vapour deposition. physica status solidi (c), Vol.8 (No.3). pp. 952-955. doi:10.1002/pssc.201000255 ISSN 1862-6351.
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Official URL: http://dx.doi.org/10.1002/pssc.201000255
Abstract
Bi-axial tensile strained Si epilayers with extremely high lattice mismatch strain up to 2.13% were grown from a disilane (Si2H6) precursor on Si1-xGex/Si(100) VSs by Reduced Pressure Chemical Vapour Deposition. We discuss the conditions under which fully strained Si epilayers of the required thickness can be grown. By demonstrating a fully strained 23 nm Si layer on a fully relaxed Si0.45Ge0.55(100) VS, this work indicates the potential for realizing high performance s-Si n- and p-MOSFETs on standard Si(100) substrates. (© 2011 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)
| Item Type: | Journal Article | ||||
|---|---|---|---|---|---|
| Subjects: | Q Science > QC Physics | ||||
| Divisions: | Faculty of Science, Engineering and Medicine > Science > Physics | ||||
| Library of Congress Subject Headings (LCSH): | Silicon, Chemical vapor deposition, Epitaxy | ||||
| Journal or Publication Title: | physica status solidi (c) | ||||
| Publisher: | Wiley - V C H Verlag GmbH & Co. KGaA | ||||
| ISSN: | 1862-6351 | ||||
| Official Date: | 2010 | ||||
| Dates: |
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| Volume: | Vol.8 | ||||
| Number: | No.3 | ||||
| Page Range: | pp. 952-955 | ||||
| DOI: | 10.1002/pssc.201000255 | ||||
| Status: | Peer Reviewed | ||||
| Publication Status: | Published |
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