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Control of epilayer thickness during epitaxial growth of high Ge content strained Ge/SiGe multilayers by RP-CVD
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Myronov, Maksym, Liu, Xue-Chao, Dobbie, A. (Andrew) and Leadley, D. R. (David R.) (2011) Control of epilayer thickness during epitaxial growth of high Ge content strained Ge/SiGe multilayers by RP-CVD. Journal of Crystal Growth, Vol.318 (No.1). pp. 337-340. doi:10.1016/j.jcrysgro.2010.10.133
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Official URL: http://dx.doi.org/10.1016/j.jcrysgro.2010.10.133
Abstract
In this work, we have developed a reduced pressure chemical vapor deposition (RP-CVD) epitaxial process to grow strain-balanced Ge/Si0.4Ge0.6 multilayers on 200 mm diameter Si(1 0 0) substrates, via an intermediate relaxed Si0.2Ge0.8/Ge buffer. The results obtained indicate that with proper selection of the epitaxial growth conditions, strain-balanced multilayered heterostructures can be produced with the precise Si0.4Ge0.6 alloy content and control of the strained epilayer thicknesses to within a few monolayers. XTEM analysis clearly resolved very abrupt Ge/Si0.4Ge0.6 heterointerfaces and the sample surfaces were seen, by AFM, to be very smooth with an RMS surface roughness below 1.5 nm.
| Item Type: | Journal Article | ||||
|---|---|---|---|---|---|
| Divisions: | Faculty of Science > Physics | ||||
| Journal or Publication Title: | Journal of Crystal Growth | ||||
| Publisher: | Elsevier BV, North-Holland | ||||
| ISSN: | 0022-0248 | ||||
| Official Date: | 2011 | ||||
| Dates: |
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| Volume: | Vol.318 | ||||
| Number: | No.1 | ||||
| Page Range: | pp. 337-340 | ||||
| DOI: | 10.1016/j.jcrysgro.2010.10.133 | ||||
| Status: | Peer Reviewed | ||||
| Publication Status: | Published | ||||
| Funder: | Engineering and Physical Sciences Research Council (EPSRC) | ||||
| Grant number: | EP/E065317/1 (EPSRC), EP/F031408/1 (EPSRC) |
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