Skip to content Skip to navigation
University of Warwick
  • Study
  • |
  • Research
  • |
  • Business
  • |
  • Alumni
  • |
  • News
  • |
  • About

University of Warwick
Publications service & WRAP

Highlight your research

  • WRAP
    • Home
    • Search WRAP
    • Browse by Warwick Author
    • Browse WRAP by Year
    • Browse WRAP by Subject
    • Browse WRAP by Department
    • Browse WRAP by Funder
    • Browse Theses by Department
  • Publications Service
    • Home
    • Search Publications Service
    • Browse by Warwick Author
    • Browse Publications service by Year
    • Browse Publications service by Subject
    • Browse Publications service by Department
    • Browse Publications service by Funder
  • Help & Advice
University of Warwick

The Library

  • Login
  • Admin

Control of epilayer thickness during epitaxial growth of high Ge content strained Ge/SiGe multilayers by RP-CVD

Tools
- Tools
+ Tools

Myronov, Maksym, Liu, Xue-Chao, Dobbie, A. (Andrew) and Leadley, D. R. (David R.) (2011) Control of epilayer thickness during epitaxial growth of high Ge content strained Ge/SiGe multilayers by RP-CVD. Journal of Crystal Growth, Vol.318 (No.1). pp. 337-340. doi:10.1016/j.jcrysgro.2010.10.133

Research output not available from this repository, contact author.
Official URL: http://dx.doi.org/10.1016/j.jcrysgro.2010.10.133

Request Changes to record.

Abstract

In this work, we have developed a reduced pressure chemical vapor deposition (RP-CVD) epitaxial process to grow strain-balanced Ge/Si0.4Ge0.6 multilayers on 200 mm diameter Si(1 0 0) substrates, via an intermediate relaxed Si0.2Ge0.8/Ge buffer. The results obtained indicate that with proper selection of the epitaxial growth conditions, strain-balanced multilayered heterostructures can be produced with the precise Si0.4Ge0.6 alloy content and control of the strained epilayer thicknesses to within a few monolayers. XTEM analysis clearly resolved very abrupt Ge/Si0.4Ge0.6 heterointerfaces and the sample surfaces were seen, by AFM, to be very smooth with an RMS surface roughness below 1.5 nm.

Item Type: Journal Article
Divisions: Faculty of Science > Physics
Journal or Publication Title: Journal of Crystal Growth
Publisher: Elsevier BV, North-Holland
ISSN: 0022-0248
Official Date: 2011
Dates:
DateEvent
2011Published
Volume: Vol.318
Number: No.1
Page Range: pp. 337-340
DOI: 10.1016/j.jcrysgro.2010.10.133
Status: Peer Reviewed
Publication Status: Published
Funder: Engineering and Physical Sciences Research Council (EPSRC)
Grant number: EP/E065317/1 (EPSRC), EP/F031408/1 (EPSRC)

Data sourced from Thomson Reuters' Web of Knowledge

Request changes or add full text files to a record

Repository staff actions (login required)

View Item View Item
twitter

Email us: wrap@warwick.ac.uk
Contact Details
About Us