McCamey, D. R., Tol, J. (Johan) van, Morley, Gavin and Boehme, C. (2010) Electronic spin storage in an electrically readable nuclear spin memory with a lifetime >100 seconds. Science, Vol.330 (No.6011). pp. 1652-1656. doi:10.1126/science.1197931 ISSN 0036-8075.

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Abstract

Electron spins are strong candidates with which to implement spintronics because they are both mobile and able to be manipulated. The relatively short lifetimes of electron spins, however, present a problem for the long-term storage of spin information. We demonstrated an ensemble nuclear spin memory in phosphorous-doped silicon, which can be read out electrically and has a lifetime exceeding 100 seconds. The electronic spin information can be mapped onto and stored in the nuclear spin of the phosphorus donors, and the nuclear spins can then be repetitively read out electrically for time periods that exceed the electron spin lifetime. We discuss how this memory can be used in conjunction with other silicon spintronic devices.

Item Type:	Journal Article
Subjects:	Q Science > QC Physics T Technology > TK Electrical engineering. Electronics Nuclear engineering
Divisions:	Faculty of Science, Engineering and Medicine > Science > Physics
Library of Congress Subject Headings (LCSH):	Nuclear spin, Spintronics
Journal or Publication Title:	Science
Publisher:	American Association for the Advancement of Science
ISSN:	0036-8075
Official Date:	17 December 2010
Dates:	Date Event 17 December 2010 Published
Volume:	Vol.330
Number:	No.6011
Page Range:	pp. 1652-1656
DOI:	10.1126/science.1197931
Status:	Peer Reviewed
Publication Status:	Published
Access rights to Published version:	Restricted or Subscription Access

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