McCamey, D., Tol, J. (Johan) van, Morley, Gavin and Boehme, C. (2009) Fast nuclear spin hyperpolarization of phosphorus in silicon. Physical Review Letters, Vol.102 (No.2). 027601-1. doi:10.1103/PhysRevLett.102.027601 ISSN 0031-9007.

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Abstract

We experimentally demonstrate a method for obtaining nuclear spin hyperpolarization, that is, polarization significantly in excess of that expected at thermal equilibrium. By exploiting a nonequilibrium Overhauser process, driven by white light irradiation, we obtain more than 68% negative nuclear polarization of phosphorus donors in silicon. This polarization is reached with a time constant of ∼150  sec, at a temperature of 1.37 K and a magnetic field of 8.5 T. The ability to obtain such large polarizations is discussed with regards to its significance for quantum information processing and magnetic resonance imaging.

Item Type:	Journal Article
Subjects:	Q Science > QC Physics
Divisions:	Faculty of Science, Engineering and Medicine > Science > Physics
Library of Congress Subject Headings (LCSH):	Nuclear spin, Polarization (Light), Thermodynamic equilibrium, Phosphorus compounds, Silicon crystals
Journal or Publication Title:	Physical Review Letters
Publisher:	American Physical Society
ISSN:	0031-9007
Official Date:	13 January 2009
Dates:	Date Event 13 January 2009 Published
Volume:	Vol.102
Number:	No.2
Number of Pages:	4
Page Range:	027601-1
DOI:	10.1103/PhysRevLett.102.027601
Status:	Peer Reviewed
Publication Status:	Published
Access rights to Published version:	Restricted or Subscription Access

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