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Long-lived spin coherence in silicon with an electrical spin trap readout

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Morley, Gavin, McCamey, D., Seipel, H., Brunel, L.-C., Tol, J. (Johan) van and Boehme, C. (2008) Long-lived spin coherence in silicon with an electrical spin trap readout. Physical Review Letters, Vol.101 (No.20). pp. 207602-1. doi:10.1103/PhysRevLett.101.207602 ISSN 0031-9007.

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Official URL: http://dx.doi.org/10.1103/PhysRevLett.101.207602

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Abstract

Pulsed electrically detected magnetic resonance of phosphorous (31P) in bulk crystalline silicon at very high magnetic fields (B0>8.5  T) and low temperatures (T=2.8  K) is presented. We find that the spin-dependent capture and reemission of highly polarized (>95%) conduction electrons by equally highly polarized 31P donor electrons introduces less decoherence than other mechanisms for spin-to-charge conversion. This allows the electrical detection of spin coherence times in excess of 100  μs, 50 times longer than the previous maximum for electrically detected spin readout experiments.

Item Type: Journal Article
Subjects: Q Science > QC Physics
Divisions: Faculty of Science, Engineering and Medicine > Science > Physics
Library of Congress Subject Headings (LCSH): Silicon, Nuclear spin, Coherence (Nuclear physics)
Journal or Publication Title: Physical Review Letters
Publisher: American Physical Society
ISSN: 0031-9007
Official Date: 14 November 2008
Dates:
DateEvent
14 November 2008Published
Volume: Vol.101
Number: No.20
Number of Pages: 4
Page Range: pp. 207602-1
DOI: 10.1103/PhysRevLett.101.207602
Status: Peer Reviewed
Publication Status: Published
Access rights to Published version: Restricted or Subscription Access
Funder: National High Magnetic Field Laboratory (NHMFL), National Science Foundation (U.S.) (NSF), United States. Dept of Energy, Florida, Engineering and Physical Sciences Research Council (EPSRC)
Grant number: 7300-100 (NHMFL), DMR-0084173 (NSF), GR/S23506 (EPSRC), EP/D049717/1 (EPSRC), EP/F04139X/1 (EPSRC)

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