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Electrically detected Rabi oscillations of phosphorus qubits in silicon
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Morley, Gavin, McCamey, D. R., Boehme, C. and Tol, J. (Johan) van (2011) Electrically detected Rabi oscillations of phosphorus qubits in silicon. physica status solidi (b), Vol.248 (No.11). pp. 2697-2699. doi:10.1002/pssb.201100145
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Official URL: http://dx.doi.org/10.1002/pssb.201100145
Abstract
Electrically detected magnetic resonance is a sensitive technique for studying electron spins bound to phosphorus atoms in silicon. Using a high magnetic field of 8.6 T increases this sensitivity by accessing a mechanism for spin-to-charge conversion which is different to that in the more commonly used magnetic field of ∼0.33 T. The higher-field regime benefits from a long spin coherence time of over 100 µs because the phosphorus spins that are detected are not coupled to dangling-bonds. Additionally, the high field permits the spin qubits to reach an equilibrium polarization of over 95% at a temperature of 2.8 K. We demonstrate electrically detected Rabi oscillations of these electron spins in the high-field regime. The Rabi frequency is proportional to the square root of the excitation power as expected.
| Item Type: | Journal Article | ||||
|---|---|---|---|---|---|
| Subjects: | Q Science > QC Physics | ||||
| Divisions: | Faculty of Science > Physics | ||||
| Library of Congress Subject Headings (LCSH): | Electron paramagnetic resonance, Silicon, Magnetic fields | ||||
| Journal or Publication Title: | physica status solidi (b) | ||||
| Publisher: | Wiley - V C H Verlag GmbH & Co. KGaA | ||||
| ISSN: | 0370-1972 | ||||
| Official Date: | November 2011 | ||||
| Dates: |
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| Volume: | Vol.248 | ||||
| Number: | No.11 | ||||
| Page Range: | pp. 2697-2699 | ||||
| DOI: | 10.1002/pssb.201100145 | ||||
| Status: | Peer Reviewed | ||||
| Publication Status: | Published | ||||
| Access rights to Published version: | Restricted or Subscription Access | ||||
| Funder: | National High Magnetic Field Laboratory (NHMFL), Australian Research Council (ARC), National Science Foundation (U.S.) (NSF) | ||||
| Grant number: | 7300-100 (NHMFL), 12488 (NHMFL), DP1093526 (ARC), 953225 (NSF) |
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