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Electrically detected Rabi oscillations of phosphorus qubits in silicon

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Morley, Gavin, McCamey, D. R., Boehme, C. and Tol, J. (Johan) van (2011) Electrically detected Rabi oscillations of phosphorus qubits in silicon. physica status solidi (b), Vol.248 (No.11). pp. 2697-2699. doi:10.1002/pssb.201100145 ISSN 0370-1972.

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Official URL: http://dx.doi.org/10.1002/pssb.201100145

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Abstract

Electrically detected magnetic resonance is a sensitive technique for studying electron spins bound to phosphorus atoms in silicon. Using a high magnetic field of 8.6 T increases this sensitivity by accessing a mechanism for spin-to-charge conversion which is different to that in the more commonly used magnetic field of ∼0.33 T. The higher-field regime benefits from a long spin coherence time of over 100 µs because the phosphorus spins that are detected are not coupled to dangling-bonds. Additionally, the high field permits the spin qubits to reach an equilibrium polarization of over 95% at a temperature of 2.8 K. We demonstrate electrically detected Rabi oscillations of these electron spins in the high-field regime. The Rabi frequency is proportional to the square root of the excitation power as expected.

Item Type: Journal Article
Subjects: Q Science > QC Physics
Divisions: Faculty of Science, Engineering and Medicine > Science > Physics
Library of Congress Subject Headings (LCSH): Electron paramagnetic resonance, Silicon, Magnetic fields
Journal or Publication Title: physica status solidi (b)
Publisher: Wiley - V C H Verlag GmbH & Co. KGaA
ISSN: 0370-1972
Official Date: November 2011
Dates:
DateEvent
November 2011Published
Volume: Vol.248
Number: No.11
Page Range: pp. 2697-2699
DOI: 10.1002/pssb.201100145
Status: Peer Reviewed
Publication Status: Published
Access rights to Published version: Restricted or Subscription Access
Funder: National High Magnetic Field Laboratory (NHMFL), Australian Research Council (ARC), National Science Foundation (U.S.) (NSF)
Grant number: 7300-100 (NHMFL), 12488 (NHMFL), DP1093526 (ARC), 953225 (NSF)

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