Characterisation of HfO2/Si/SiC MOS capacitors
Gammon, P. M., Pérez-Tomás, Amador, Jennings, M. R., Guy, O. J., Rimmer, N., Llobet, J., Mestres, Narcis, Godignon, P., Placidi, Marcel, Zabala, M., Covington, James A. and Mawby, P. A.. (2011) Characterisation of HfO2/Si/SiC MOS capacitors. Materials Science Forum, Vol.679-680 . pp. 674-677. ISSN 1662-9752Full text not available from this repository.
Official URL: http://dx.doi.org/10.4028/www.scientific.net/MSF.6...
In this paper, the integration of HfO(2) onto SiC has been investigated via a number of different test structures. Capacitors consisting of HfO(2) on Si, SiC, Si/SiC and SiO(2)/SiC have been fabricated and electrically tested. The new HfO(2)/Si/SiC capacitors provide the greatest breakdown electric field of 3.5 MV/cm, whilst leakage currents are minimised through the insertion of the narrow bandgap material. The Si layer, which is wafer bonded to the SiC, is proven to be stress free through Raman spectroscopy, whilst TEM and EDX prove that the interface is free of contaminants.
|Item Type:||Journal Article|
|Subjects:||Q Science > QC Physics
Q Science > QD Chemistry
T Technology > TP Chemical technology
|Divisions:||Faculty of Science > Chemistry|
|Library of Congress Subject Headings (LCSH):||Hafnium oxide, Silicon carbide, Capacitors, Metal oxide semiconductors|
|Journal or Publication Title:||Materials Science Forum|
|Publisher:||Trans Tech Publications Ltd.|
|Page Range:||pp. 674-677|
|Version or Related Resource:||Originally presented at the 8th European Conference on Silicon Carbide and Related Materials, Sundvolden Conference Centre, Oslo, Norway, August 29 - September 02, 2010.|
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