Katsaros, G., Tersoff, J., Stoffel, M., Rastelli, A., Acosta-Diaz, P., Kar, G. S., Costantini, Giovanni, Schmidt, O. and Kern, K. (2008) Positioning of strained islands by interaction with surface nanogrooves. Physical Review Letters, Vol.101 (No.9). article no.096103 . doi:10.1103/PhysRevLett.101.096103 ISSN 0031-9007.

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Abstract

When strained Stranski-Krastanow islands are used as “self-assembled quantum dots,” a key goal is to control the island position. Here we show that nanoscale grooves can control the nucleation of epitaxial Ge islands on Si(001), and can drive lateral motion of existing islands onto the grooves, even when the grooves are very narrow and shallow compared to the islands. A position centered on the groove minimizes energy. We use as prototype grooves the trenches which form naturally around islands. During coarsening, the shrinking islands move laterally to sit directly astride that trench. In subsequent growth, we demonstrate that islands nucleate on the “empty trenches” which remain on the surface after complete dissolution of the original islands.

Item Type:	Journal Article
Subjects:	Q Science > QC Physics
Divisions:	Faculty of Science, Engineering and Medicine > Science > Chemistry
Library of Congress Subject Headings (LCSH):	Germanium, Silicon, Quantum dots, Molecular beam epitaxy, Nanoscience
Journal or Publication Title:	Physical Review Letters
Publisher:	American Physical Society
ISSN:	0031-9007
Official Date:	2008
Dates:	Date Event 2008 Published
Volume:	Vol.101
Number:	No.9
Number of Pages:	4
Page Range:	article no.096103
DOI:	10.1103/PhysRevLett.101.096103
Status:	Peer Reviewed
Publication Status:	Published

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