Bryant, Angus T., Yang, Shaoyong, Mawby, P. A. (Philip A.), Xiang, Dawei, Ran, Li, Tavner, Peter and Palmer, Patrick R.. (2011) Investigation into IGBT dV/dt during turn-off and its temperature dependence. IEEE Transactions on Power Electronics, Vol.26 (No.10). pp. 3019-3031. ISSN 0885-8993

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Abstract

In many power converter applications, particularly those with high variable loads, such as traction and wind power, condition monitoring of the power semiconductor devices in the converter is considered desirable. Monitoring the device junction temperature in such converters is an essential part of this process. In this paper, a method for measuring the insulated gate bipolar transistor (IGBT) junction temperature using the collector voltage dV/dt at turn-OFF is outlined. A theoretical closed-form expression for the dV/dt at turn-OFF is derived, closely agreeing with experimental measurements. The role of dV/dt in dynamic avalanche in high-voltage IGBTs is also discussed. Finally, the implications of the temperature dependence of the dV/dt are discussed, including implementation of such a temperature measurement technique.

Item Type:	Journal Article
Subjects:	T Technology > TK Electrical engineering. Electronics Nuclear engineering
Divisions:	Faculty of Science > Engineering
Journal or Publication Title:	IEEE Transactions on Power Electronics
Publisher:	IEEE
ISSN:	0885-8993
Date:	October 2011
Volume:	Vol.26
Number:	No.10
Page Range:	pp. 3019-3031
Identification Number:	10.1109/TPEL.2011.2125803
Status:	Peer Reviewed
Publication Status:	Published
Access rights to Published version:	Restricted or Subscription Access
Funder:	Engineering and Physical Sciences Research Council (EPSRC), Schiff Foundation, Cambridge University
Grant number:	EP/E0274$$$$4X/1 (EPSRC), EP/E026923/1 (EPSRC)
URI:	http://wrap.warwick.ac.uk/id/eprint/40439

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