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Structural characterization of GaSb-capped InAs/GaAs quantum dots with a GaAs intermediate layer
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Beltran, Ana M., Ben, Teresa, Sánchez, Ana M., Ripalda, J. M., Taboada, A. G. and Molina, Sergio I. (2011) Structural characterization of GaSb-capped InAs/GaAs quantum dots with a GaAs intermediate layer. Materials Letters, Volume 65 (Number 11). pp. 1608-1610. doi:10.1016/j.matlet.2011.02.086
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Official URL: http://dx.doi.org/10.1016/j.matlet.2011.02.086
Abstract
GaSb incorporation to InAs/GaAs quantum dots is considered for improving the opto-electronic properties of the systems. In order to optimize these properties, the introduction of an intermediate GaAs layer is considered a good approach. In this work, we study the effect of the introduction of a GaAs intermediate layer between InAs quantum dots and a GaSb capping layer on structural and crystalline quality of these heterostructures. As the thickness of the GaAs intermediate layer increases, a reduction of defect density has been observed as well as changes of quantum dots sizes. This approach suggests a promising method to improve the incorporation of Sb to InAs heterostructures. (C) 2011 Elsevier B.V. All rights reserved.
| Item Type: | Journal Article | ||||
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| Subjects: | Q Science > QC Physics T Technology > TK Electrical engineering. Electronics Nuclear engineering |
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| Divisions: | Faculty of Science > Physics | ||||
| Library of Congress Subject Headings (LCSH): | Gallium arsenide, Quantum dots, Transmission electron microscopy, Optoelectronic devices | ||||
| Journal or Publication Title: | Materials Letters | ||||
| Publisher: | Elsevier BV | ||||
| ISSN: | 0167-577X | ||||
| Official Date: | 2011 | ||||
| Dates: |
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| Volume: | Volume 65 | ||||
| Number: | Number 11 | ||||
| Page Range: | pp. 1608-1610 | ||||
| DOI: | 10.1016/j.matlet.2011.02.086 | ||||
| Status: | Peer Reviewed | ||||
| Publication Status: | Published | ||||
| Funder: | Spain. Ministerio de Ciencia e Innovación (MICINN), Andalusia (Spain), | ||||
| Grant number: | TEC2008-06756-C03-02/TEC (MICINN), 2010 CSD2009-00013 (MICINN), P08-TEP-03516 (Andalusia) |
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