Beltran, Ana M., Ben, Teresa, Sanchez, Ana M., Ripalda, J. M., Taboada, A. G. and Molina, Sergio I.. (2011) Structural characterization of GaSb-capped InAs/GaAs quantum dots with a GaAs intermediate layer. Materials Letters, Volume 65 (Number 11). pp. 1608-1610. ISSN 0167-577X

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Abstract

GaSb incorporation to InAs/GaAs quantum dots is considered for improving the opto-electronic properties of the systems. In order to optimize these properties, the introduction of an intermediate GaAs layer is considered a good approach. In this work, we study the effect of the introduction of a GaAs intermediate layer between InAs quantum dots and a GaSb capping layer on structural and crystalline quality of these heterostructures. As the thickness of the GaAs intermediate layer increases, a reduction of defect density has been observed as well as changes of quantum dots sizes. This approach suggests a promising method to improve the incorporation of Sb to InAs heterostructures. (C) 2011 Elsevier B.V. All rights reserved.

Item Type:	Journal Article
Subjects:	Q Science > QC Physics T Technology > TK Electrical engineering. Electronics Nuclear engineering
Divisions:	Faculty of Science > Physics
Library of Congress Subject Headings (LCSH):	Gallium arsenide, Quantum dots, Transmission electron microscopy, Optoelectronic devices
Journal or Publication Title:	Materials Letters
Publisher:	Elsevier BV
ISSN:	0167-577X
Official Date:	2011
Volume:	Volume 65
Number:	Number 11
Page Range:	pp. 1608-1610
Identification Number:	10.1016/j.matlet.2011.02.086
Status:	Peer Reviewed
Publication Status:	Published
Funder:	Spain. Ministerio de Ciencia e Innovación (MICINN), Andalusia (Spain),
Grant number:	TEC2008-06756-C03-02/TEC (MICINN), 2010 CSD2009-00013 (MICINN), P08-TEP-03516 (Andalusia)
References:	[1] Akahane K, Yamamoto N, Gozu S, Ueta A, Otany N. Phys E 2006;32:81–4. [2] Fuster D, Gonzalez MU, Gonzalez L, Gonzalez Y, Ben T, Ponce A, et al. Appl Phys Lett 2004;85:1424–6. [3] Bimberg D, Grundmann M, Ledentsov NN. Quantum dot heterostructures. New York: Wiley; 1999. [4] Timm R, Eisele H, Lenz A, Kim T-Y, Striecher F, Pötschke K, et al. Phys E 2006;32:25–8. [5] Stringfellow GB. J Cryst Growth 1982;58:194–202. [6] Molina SI, Sanchez AM, Beltran AM, Sales DL, Ben T, Chisholm MF, et al. Appl Phys Lett 2007;91(263105):1–3. [7] Ripalda JM, Granados D, Gonzalez Y, Sanchez AM, Molina SI, Garcia JM. Appl Phys Lett 2005;87(202108):1–3. [8] Sanchez AM, Beltran AM, Beanland R, Ben T, Gass MH, de la Pena F, et al. Nanotechnology 2010;21(145606):1–8. [9] Stadelmann PA. Ultramicroscopy 1987;21:131–46. [10] Jacobi K. Progess Surf Sci 2003;71:185–215. [11] Costantini G, Rastelli A, Manzano C, Acosta-Diaz P, Songmuang R, Katsaros G, et al. Phys Rev Lett 2006;96(226106):1–4. [12] Sears K, Wong-Leung J, Tan HH, Jagadish C. J Appl Phys 2006;99(113503):1–8.
URI:	http://wrap.warwick.ac.uk/id/eprint/41312

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