Structural characterization of GaSb-capped InAs/GaAs quantum dots with a GaAs intermediate layer
Beltran, Ana M., Ben, Teresa, Sanchez, Ana M., Ripalda, J. M., Taboada, A. G. and Molina, Sergio I.. (2011) Structural characterization of GaSb-capped InAs/GaAs quantum dots with a GaAs intermediate layer. Materials Letters, Volume 65 (Number 11). pp. 1608-1610. ISSN 0167-577XFull text not available from this repository.
Official URL: http://dx.doi.org/10.1016/j.matlet.2011.02.086
GaSb incorporation to InAs/GaAs quantum dots is considered for improving the opto-electronic properties of the systems. In order to optimize these properties, the introduction of an intermediate GaAs layer is considered a good approach. In this work, we study the effect of the introduction of a GaAs intermediate layer between InAs quantum dots and a GaSb capping layer on structural and crystalline quality of these heterostructures. As the thickness of the GaAs intermediate layer increases, a reduction of defect density has been observed as well as changes of quantum dots sizes. This approach suggests a promising method to improve the incorporation of Sb to InAs heterostructures. (C) 2011 Elsevier B.V. All rights reserved.
|Item Type:||Journal Article|
|Subjects:||Q Science > QC Physics
T Technology > TK Electrical engineering. Electronics Nuclear engineering
|Divisions:||Faculty of Science > Physics|
|Library of Congress Subject Headings (LCSH):||Gallium arsenide, Quantum dots, Transmission electron microscopy, Optoelectronic devices|
|Journal or Publication Title:||Materials Letters|
|Page Range:||pp. 1608-1610|
|Funder:||Spain. Ministerio de Ciencia e Innovación (MICINN), Andalusia (Spain),|
|Grant number:||TEC2008-06756-C03-02/TEC (MICINN), 2010 CSD2009-00013 (MICINN), P08-TEP-03516 (Andalusia)|
 Akahane K, Yamamoto N, Gozu S, Ueta A, Otany N. Phys E 2006;32:81–4.
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