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Structural characterization of GaSb-capped InAs/GaAs quantum dots with a GaAs intermediate layer

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Beltran, Ana M., Ben, Teresa, Sánchez, Ana M., Ripalda, J. M., Taboada, A. G. and Molina, Sergio I. (2011) Structural characterization of GaSb-capped InAs/GaAs quantum dots with a GaAs intermediate layer. Materials Letters, Volume 65 (Number 11). pp. 1608-1610. doi:10.1016/j.matlet.2011.02.086

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Official URL: http://dx.doi.org/10.1016/j.matlet.2011.02.086

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Abstract

GaSb incorporation to InAs/GaAs quantum dots is considered for improving the opto-electronic properties of the systems. In order to optimize these properties, the introduction of an intermediate GaAs layer is considered a good approach. In this work, we study the effect of the introduction of a GaAs intermediate layer between InAs quantum dots and a GaSb capping layer on structural and crystalline quality of these heterostructures. As the thickness of the GaAs intermediate layer increases, a reduction of defect density has been observed as well as changes of quantum dots sizes. This approach suggests a promising method to improve the incorporation of Sb to InAs heterostructures. (C) 2011 Elsevier B.V. All rights reserved.

Item Type: Journal Article
Subjects: Q Science > QC Physics
T Technology > TK Electrical engineering. Electronics Nuclear engineering
Divisions: Faculty of Science > Physics
Library of Congress Subject Headings (LCSH): Gallium arsenide, Quantum dots, Transmission electron microscopy, Optoelectronic devices
Journal or Publication Title: Materials Letters
Publisher: Elsevier BV
ISSN: 0167-577X
Official Date: 2011
Dates:
DateEvent
2011Published
Volume: Volume 65
Number: Number 11
Page Range: pp. 1608-1610
DOI: 10.1016/j.matlet.2011.02.086
Status: Peer Reviewed
Publication Status: Published
Funder: Spain. Ministerio de Ciencia e Innovación (MICINN), Andalusia (Spain),
Grant number: TEC2008-06756-C03-02/TEC (MICINN), 2010 CSD2009-00013 (MICINN), P08-TEP-03516 (Andalusia)

Data sourced from Thomson Reuters' Web of Knowledge

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