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Structural and optical changes induced by incorporation of antimony into InAs/GaAs(001) quantum dots

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Taboada, A. G., Sánchez, Ana M., Beltran, Ana M., Bozkurt, M., Alonso-Álvarez, D., Alén, B., Rivera, A., Ripalda, J. M., Llorens, Jose Manuel, Martín-Sánchez, J., González, Y., Ulloa, Jose M., Garcia, Jorge M., Molina, Sergio I. and Koenraad, P. M. (Paul M.) (2010) Structural and optical changes induced by incorporation of antimony into InAs/GaAs(001) quantum dots. Physical Review B (Condensed Matter and Materials Physics), Volume 82 (Number 23). article no. 235316. doi:10.1103/PhysRevB.82.235316

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Official URL: http://dx.doi.org/10.1103/PhysRevB.82.235316

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Abstract

We present experimental evidence of Sb incorporation inside InAs/GaAs (001) quantum dots exposed to an antimony flux immediately before capping with GaAs. The Sb composition profile inside the nanostructures as measured by cross-sectional scanning tunneling and electron transmission microscopies show two differentiated regions within the quantum dots, with an Sb rich alloy at the tip of the quantum dots. Atomic force microscopy and transmission electron microscopy micrographs show increased quantum-dot height with Sb flux exposure. The evolution of the reflection high-energy electron-diffraction pattern suggests that the increased height is due to changes in the quantum-dot capping process related to the presence of segregated Sb atoms. These structural and compositional changes result in a shift of the room-temperature photoluminescence emission from 1.26 to 1.36 mu m accompanied by an order of magnitude increase in the room-temperature quantum-dot luminescence intensity.

Item Type: Journal Article
Subjects: Q Science > QC Physics
Q Science > QD Chemistry
Divisions: Faculty of Science > Physics
Library of Congress Subject Headings (LCSH): Quantum dots, Antimony, Gallium arsenide, Indium arsenide
Journal or Publication Title: Physical Review B (Condensed Matter and Materials Physics)
Publisher: American Physical Society
ISSN: 1098-0121
Official Date: 2010
Dates:
DateEvent
2010Published
Volume: Volume 82
Number: Number 23
Page Range: article no. 235316
DOI: 10.1103/PhysRevB.82.235316
Status: Peer Reviewed
Publication Status: Published
Funder: Spain. CAM, Spain. Ministerio de Educación y Ciencia (MEC), Spain. Ministerio de Ciencia e Innovación (MICINN), Consejo Superior de Investigaciones Científicas (Spain) (CSIC), Science City Research Alliance, Higher Education Funding Council for England (HEFCE)
Grant number: S-505/ENE-310 S-505/ESP/000200 S2009ESP-150 (CAM) ; TEC2008-06756-C03-01 CSD2006-00019 CSD2006-00004 (MEC)

Data sourced from Thomson Reuters' Web of Knowledge

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