The Library
Polarity effects in the x-ray photoemission of ZnO and other wurtzite semiconductors
Tools
Tools
Tools
Allen, M. W., Zemlyanov, D. Y., Waterhouse, G. I. N., Metson, J. B., Veal, T. D. (Tim D.), McConville, C. F. (Chris F.) and Durbin, S. M.. (2011) Polarity effects in the x-ray photoemission of ZnO and other wurtzite semiconductors. Applied Physics Letters, Vol.98 (No.10). p. 101906. ISSN 0003-6951
Full text not available from this repository.
Official URL: http://dx.doi.org/10.1063/1.3562308
Abstract
Significant polarity-related effects were observed in the near-surface atomic composition and valence band electronic structure of ZnO single crystals, investigated by x-ray photoemission spectroscopy using both Al K(alpha) (1486.6 eV) and synchrotron radiation (150 to 1486 eV). In particular, photoemission from the lowest binding energy valence band states was found to be significantly more intense on the Zn-polar face compared to the O-polar face. This is a consistent effect that can be used as a simple, nondestructive indicator of crystallographic polarity in ZnO and other wurtzite semiconductors. (C) 2011 American Institute of Physics. [doi: 10.1063/1.3562308]
| Item Type: | Journal Article |
|---|---|
| Subjects: | Q Science > QC Physics |
| Divisions: | Faculty of Science > Physics |
| Journal or Publication Title: | Applied Physics Letters |
| Publisher: | American Institute of Physics |
| ISSN: | 0003-6951 |
| Date: | 7 March 2011 |
| Volume: | Vol.98 |
| Number: | No.10 |
| Page Range: | p. 101906 |
| Identification Number: | 10.1063/1.3562308 |
| Status: | Peer Reviewed |
| Publication Status: | Published |
| Access rights to Published version: | Restricted or Subscription Access |
| Funder: | Marsden Fund |
| Grant number: | UOC0909 (Marsden Fund) |
| URI: | http://wrap.warwick.ac.uk/id/eprint/41749 |
Data sourced from Thomson Reuters' Web of Knowledge
Actions (login required)
 |
View Item |
