The Library
Electron mobility in CdO films
Tools
Tools
Tools
Vasheghani Farahani, Sepehr, Veal, T. D. (Tim D.), King, P. D. C., Zúñiga-Pérez, J., Muñoz-Sanjosé, V. and McConville, C. F. (Chris F.). (2011) Electron mobility in CdO films. Journal of Applied Physics, Vol.109 (No.7). 073712. ISSN 0021-8979
Full text not available from this repository.
Official URL: http://dx.doi.org/10.1063/1.3562141
Abstract
Electron mobility in degenerate CdO thin films has been studied as a function of carrier concentration. The "optical" mobility has been determined from infrared reflectance measurements of the conduction band plasmon lifetime. The acquired values vary from similar to 209 to similar to 1116 cm(2) V(-1) s(-1) for carrier concentrations between 2.5 x 10(20) and 2.6 x 1019 cm(-3). Ionized impurity scattering is shown to be the dominant effect reducing the intra-grain mobility of the electrons at room temperature. The transport mobilities from Hall effect measurements range between similar to 20 and similar to 124 cm(2) V(-1) s(-1) which are much lower than the optical mobilities. Simulation of grain boundary scattering-limited mobility is commonly based on models that assume a depletion layer at the boundaries which causes an inter-grain potential barrier. These models are found not to be applicable to CdO as it has been previously shown to have surface electron accumulation. Therefore, simulation of the transport mobility has been performed using the Fuchs-Sondheimer and Mayadas-Shatzkes models to take into account the grain boundary and surface scattering mechanisms, in addition to intra-grain scattering. The results indicate that electron scattering at grain boundaries with similar to 95 % reflection is the dominant mechanism in reducing the mobility across the layer. The effect of surface scattering plays only a minor role in electron transport. (C) 2011 American Institute of Physics. [doi:10.1063/1.3562141]
| Item Type: | Journal Article | ||||
|---|---|---|---|---|---|
| Subjects: | Q Science > QC Physics | ||||
| Divisions: | Faculty of Science > Physics | ||||
| Journal or Publication Title: | Journal of Applied Physics | ||||
| Publisher: | American Institute of Physics | ||||
| ISSN: | 0021-8979 | ||||
| Official Date: | 1 April 2011 | ||||
| Dates: |
|
||||
| Volume: | Vol.109 | ||||
| Number: | No.7 | ||||
| Page Range: | 073712 | ||||
| Identification Number: | 10.1063/1.3562141 | ||||
| Status: | Peer Reviewed | ||||
| Publication Status: | Published | ||||
| Access rights to Published version: | Restricted or Subscription Access | ||||
| Funder: | Engineering and Physical Sciences Research Council (EPSRC), Spanish Government | ||||
| Grant number: | EP/G004447/1 (EPSRC), MAT2007-66129 (Spanish Government) | ||||
| URI: | http://wrap.warwick.ac.uk/id/eprint/41773 |
Data sourced from Thomson Reuters' Web of Knowledge
Request changes or add full text files to a record
Actions (login required)
 |
View Item |
