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Electron mobility in CdO films

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Vasheghani Farahani, Sepehr, Veal, T. D. (Tim D.), King, P. D. C., Zúñiga-Pérez, J., Muñoz-Sanjosé, V. and McConville, C. F. (Chris F.) (2011) Electron mobility in CdO films. Journal of Applied Physics, Vol.109 (No.7). 073712. doi:10.1063/1.3562141

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Official URL: http://dx.doi.org/10.1063/1.3562141

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Abstract

Electron mobility in degenerate CdO thin films has been studied as a function of carrier concentration. The "optical" mobility has been determined from infrared reflectance measurements of the conduction band plasmon lifetime. The acquired values vary from similar to 209 to similar to 1116 cm(2) V(-1) s(-1) for carrier concentrations between 2.5 x 10(20) and 2.6 x 1019 cm(-3). Ionized impurity scattering is shown to be the dominant effect reducing the intra-grain mobility of the electrons at room temperature. The transport mobilities from Hall effect measurements range between similar to 20 and similar to 124 cm(2) V(-1) s(-1) which are much lower than the optical mobilities. Simulation of grain boundary scattering-limited mobility is commonly based on models that assume a depletion layer at the boundaries which causes an inter-grain potential barrier. These models are found not to be applicable to CdO as it has been previously shown to have surface electron accumulation. Therefore, simulation of the transport mobility has been performed using the Fuchs-Sondheimer and Mayadas-Shatzkes models to take into account the grain boundary and surface scattering mechanisms, in addition to intra-grain scattering. The results indicate that electron scattering at grain boundaries with similar to 95 % reflection is the dominant mechanism in reducing the mobility across the layer. The effect of surface scattering plays only a minor role in electron transport. (C) 2011 American Institute of Physics. [doi:10.1063/1.3562141]

Item Type: Journal Article
Subjects: Q Science > QC Physics
Divisions: Faculty of Science > Physics
Journal or Publication Title: Journal of Applied Physics
Publisher: American Institute of Physics
ISSN: 0021-8979
Official Date: 1 April 2011
Dates:
DateEvent
1 April 2011Published
Volume: Vol.109
Number: No.7
Page Range: 073712
DOI: 10.1063/1.3562141
Status: Peer Reviewed
Publication Status: Published
Access rights to Published version: Restricted or Subscription Access
Funder: Engineering and Physical Sciences Research Council (EPSRC), Spanish Government
Grant number: EP/G004447/1 (EPSRC), MAT2007-66129 (Spanish Government)

Data sourced from Thomson Reuters' Web of Knowledge

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