Liu, Xue-Chao, Chen, Zhi-Zhan, Shi, Er-Wei, Liao, Da-Qian and Zhou, Ke-Jin (2011) Room-temperature anomalous Hall effect and magnetroresistance in (Ga, Co)-codoped ZnO diluted magnetic semiconductor films. Chinese Physics B, Vol.20 (No.3). 037501. doi:10.1088/1674-1056/20/3/037501 ISSN 1674-1056.

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Abstract

This paper reports that the (Ga, Co)-codoped ZnO thin films have been grown by inductively coupled plasma enhanced physical vapour deposition. Room-temperature ferromagnetism is observed for the as-grown thin films. The x-ray absorption fine structure characterization reveals that Co(2+) and Ga(3+) ions substitute for Zn(2+) ions in the ZnO lattice and exclude the possibility of extrinsic ferromagnetism origin. The ferromagnetic (Ga, Co)-codoped ZnO thin films exhibit carrier concentration dependent anomalous Hall effect and positive magnetoresistance at room temperature. The mechanism of anomalous Hall effect and magneto-transport in ferromagnetic ZnO-based diluted magnetic semiconductors is discussed.

Item Type:	Journal Article
Subjects:	Q Science > QC Physics
Divisions:	Faculty of Science, Engineering and Medicine > Science > Physics
Journal or Publication Title:	Chinese Physics B
Publisher:	Institute of Physics Publishing Ltd.
ISSN:	1674-1056
Official Date:	March 2011
Dates:	Date Event March 2011 Published
Volume:	Vol.20
Number:	No.3
Page Range:	037501
DOI:	10.1088/1674-1056/20/3/037501
Status:	Peer Reviewed
Publication Status:	Published
Access rights to Published version:	Restricted or Subscription Access
Funder:	National Natural Science Foundation of China (NSFC)
Grant number:	50772122 51002176 (NSFC)

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