Liu, Xue-Chao, Chen, Zhi-Zhan, Shi, Er-Wei, Liao, Da-Qian and Zhou, Ke-Jin (2011) Room-temperature anomalous Hall effect and magnetroresistance in (Ga, Co)-codoped ZnO diluted magnetic semiconductor films. Chinese Physics B, Vol.20 (No.3). 037501. doi:10.1088/1674-1056/20/3/037501 ISSN 1674-1056.
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Abstract
This paper reports that the (Ga, Co)-codoped ZnO thin films have been grown by inductively coupled plasma enhanced physical vapour deposition. Room-temperature ferromagnetism is observed for the as-grown thin films. The x-ray absorption fine structure characterization reveals that Co(2+) and Ga(3+) ions substitute for Zn(2+) ions in the ZnO lattice and exclude the possibility of extrinsic ferromagnetism origin. The ferromagnetic (Ga, Co)-codoped ZnO thin films exhibit carrier concentration dependent anomalous Hall effect and positive magnetoresistance at room temperature. The mechanism of anomalous Hall effect and magneto-transport in ferromagnetic ZnO-based diluted magnetic semiconductors is discussed.
Item Type: | Journal Article |
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Subjects: | Q Science > QC Physics |
Divisions: | Faculty of Science, Engineering and Medicine > Science > Physics |
Journal or Publication Title: | Chinese Physics B |
Publisher: | Institute of Physics Publishing Ltd. |
ISSN: | 1674-1056 |
Official Date: | March 2011 |
Dates: | Date Event March 2011 Published |
Volume: | Vol.20 |
Number: | No.3 |
Page Range: | 037501 |
DOI: | 10.1088/1674-1056/20/3/037501 |
Status: | Peer Reviewed |
Publication Status: | Published |
Access rights to Published version: | Restricted or Subscription Access |
Funder: | National Natural Science Foundation of China (NSFC) |
Grant number: | 50772122 51002176 (NSFC) |
URI: | https://wrap.warwick.ac.uk/41791/ |
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