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Positive quasiclassical magnetoresistance and quantum effects in germanium quantum wells

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Berkutov, I. B., Andrievskii, V. V., Komnik, Yu. F. and Mironov, O. A. (2010) Positive quasiclassical magnetoresistance and quantum effects in germanium quantum wells. Low Temperature Physics, Vol.36 (No.12). p. 1076. doi:10.1063/1.3536348

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Official URL: http://dx.doi.org/10.1063/1.3536348

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Abstract

Changes in the conductivity of p-type quantum-well heterostructures of Si(0.05)Ge(0.95) alloy are studied at temperatures ranging from 0.352-7.1 K and magnetic fields of up to 11 T. The distinctive feature of the sample was asymmetric doping, with layers of Si(0.4)Ge(0.6) with boron impurity concentrations of 2 . 10(18) and 8 . 10(18) cm(-3) positioned on opposite sides of the quantum well. Shubnikov-de Haas oscillations were observed clearly against the background of a high quasi-classical positive magnetoresistance. The field dependence of the magnetoresistance is well described by a function of the form rho(xx)(B)/rho(xx)(0)proportional to B(12/7), as predicted by a theory including the combined effect of both short-and long-range disorder. The contribution to the temperature and magnetic field dependences of the resistance owing to quantum corrections associated with weak localization and charge carrier interactions is determined. Strong spin-orbital scattering of holes on the quantum well is revealed by analyzing these corrections. A study of the variations in the amplitude of the Shubnikov-de Haas oscillations with temperature and magnetic field (including the monotonic behavior of the resistance with changing magnetic field) makes it possible to determine the effective mass of the charge carriers, m*=0.17m(0) The temperature dependence of the hole-phonon relaxation time was found by studying the overheating of charge carriers by an electric field. (C) 2010 American Institute of Physics. [doi:10.1063/1.3536348]

Item Type: Journal Article
Divisions: Faculty of Science > Physics
Journal or Publication Title: Low Temperature Physics
Publisher: American Institute of Physics
ISSN: 1063-777X
Official Date: 2010
Dates:
DateEvent
2010Published
Volume: Vol.36
Number: No.12
Page Range: p. 1076
DOI: 10.1063/1.3536348
Status: Peer Reviewed
Publication Status: Published
Access rights to Published version: Restricted or Subscription Access

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