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Micro and nano analysis of 0.2 Ω mm Ti/Al/Ni/Au ohmic contact to AlGaN/GaN
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Fontserè, A., Pérez-Tomás, Amador, Placidi, M., Llobet, J., Baron, N., Chenot, S., Cordier, Y., Moreno, J. C., Gammon, P. M., Jennings, M. R., Porti, M., Bayerl, A., Lanza, M. and Nafría, M.. (2011) Micro and nano analysis of 0.2 Ω mm Ti/Al/Ni/Au ohmic contact to AlGaN/GaN. Applied Physics Letters, Vol.99 (No.21). article no. 213504. ISSN 0003-6951
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Official URL: http://dx.doi.org/10.1063/1.3661167
Abstract
As GaN technology continues to gain popularity, it is necessary to control the ohmic contact properties and to improve device consistency across the whole wafer. In this paper, we use a range of submicron characterization tools to understand the conduction mechanisms through the AlGaN/GaN ohmic contact. Our results suggest that there is a direct path for electron flow between the two dimensional electron gas and the contact pad. The estimated area of these highly conductive pillars is around 5% of the total contact area. (C) 2011 American Institute of Physics. [doi:10.1063/1.3661167]
| Item Type: | Journal Article |
|---|---|
| Subjects: | T Technology > TK Electrical engineering. Electronics Nuclear engineering |
| Divisions: | Faculty of Science > Engineering |
| Journal or Publication Title: | Applied Physics Letters |
| Publisher: | American Institute of Physics |
| ISSN: | 0003-6951 |
| Date: | 2011 |
| Volume: | Vol.99 |
| Number: | No.21 |
| Page Range: | article no. 213504 |
| Identification Number: | 10.1063/1.3661167 |
| Status: | Peer Reviewed |
| Publication Status: | Published |
| Access rights to Published version: | Restricted or Subscription Access |
| URI: | http://wrap.warwick.ac.uk/id/eprint/41967 |
Data sourced from Thomson Reuters' Web of Knowledge
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