Fontserè, A., Pérez-Tomás, Amador, Placidi, M., Fernández-Martínez, P., Baron, N., Chenot, S., Cordier, Y., Moreno, J.C., Gammon, P. M. and Jennings, M. R.. (2011) Temperature dependence of Al/Ti-based Ohmic contact to GaN devices : HEMT and MOSFET. Microelectronic Engineering, Vol.88 (No.10). pp. 3140-3144. ISSN 0167-9317

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Abstract

In this paper two types of Al/Ti-based Ohmic contacts to Gallium Nitride (GaN) based devices are presented; Implanted N(+) GaN (like the ones found in the Source/Drain of GaN Metal Oxide Semiconductor Field Effect Transistors-MOSFET) and heterojunction (HJ) AlGaN/GaN contacts (Source/Drain of High Electron Mobility Transistors-HEMT). Sheet resistance (R(sh)) and contact resistance (R(c)) have been investigated in the temperature (T) range of 25-250 degrees C. It was found that the R(sh) (850/700 Omega square) (25/250 degrees C) and R(c) (2.2/0.7 Omega mm) decrease with T for Implanted N(+) GaN contact and R(sh) (400/850 Omega square) and R(c) (0.2/0.4 Omega mm) (weakly for R(c)) increase with T for HJ AlGaN/GaN contact. Numerical computation based models are used to determine the theoretical R(sh) and R(c) behavior with T and to fit the experimental values. (C) 2011 Elsevier B.V. All rights reserved.

Item Type:	Journal Article
Subjects:	T Technology > TK Electrical engineering. Electronics Nuclear engineering
Divisions:	Faculty of Science > Engineering
Journal or Publication Title:	Microelectronic Engineering
Publisher:	Elsevier BV
ISSN:	0167-9317
Date:	2011
Volume:	Vol.88
Number:	No.10
Number of Pages:	5
Page Range:	pp. 3140-3144
Identification Number:	10.1016/j.mee.2011.06.015
Status:	Peer Reviewed
Publication Status:	Published
Access rights to Published version:	Restricted or Subscription Access
Funder:	Spanish MICyN
Grant number:	TEC2008-05577/TEC (Spanish MICyN)
URI:	http://wrap.warwick.ac.uk/id/eprint/41984

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