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Initial stages of MnAs heteroepitaxy and nanoisland growth on GaAs(110) and (001) surfaces

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Hirayama, Motoi, Bell, Gavin R. and Tsukamoto, Shiro. (2011) Initial stages of MnAs heteroepitaxy and nanoisland growth on GaAs(110) and (001) surfaces. Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, Vol.29 (No.4). 04D109. ISSN 10711023

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Official URL: http://dx.doi.org/10.1116/1.3610963

Abstract

The authors have investigated the initial growth of MnAs layers by step-by-step epitaxy on GaAs(110) and GaAs(001). On both surfaces, MnAs nanocrystals developed as the initial stage of MnAs layer formation. Surprisingly, an ultrahigh density (∼1×1012 cm-2) of the nanocrystals with a height of ∼5 nm and a size of ∼20 nm appeared on GaAs(110). On different surface orientations, the density and the size of the nanocrystals vary. The behavior of the nanocrystallizations can be explained by symmetry at the surface.

Item Type:	Journal Article
Subjects:	Q Science > QC Physics Q Science > QD Chemistry T Technology > TA Engineering (General). Civil engineering (General)
Divisions:	Faculty of Science > Physics
Library of Congress Subject Headings (LCSH):	Epitaxy, Nanocrystals, Nanostructured materials, Alloys, Arsenic, Manganese alloys
Journal or Publication Title:	Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures
Publisher:	IEEE
ISSN:	10711023
Date:	2011
Volume:	Vol.29
Number:	No.4
Page Range:	04D109
Identification Number:	10.1116/1.3610963
Status:	Peer Reviewed
Publication Status:	Published
Access rights to Published version:	Restricted or Subscription Access
Funder:	Kagaku Gijutsu Shinkō Kikō [Japan Science and Technology Agency] (JST)
URI:	http://wrap.warwick.ac.uk/id/eprint/43316