Skip to content Skip to navigation
University of Warwick
  • Study
  • |
  • Research
  • |
  • Business
  • |
  • Alumni
  • |
  • News
  • |
  • About

University of Warwick
Publications service & WRAP

Highlight your research

  • WRAP
    • Home
    • Search WRAP
    • Browse by Warwick Author
    • Browse WRAP by Year
    • Browse WRAP by Subject
    • Browse WRAP by Department
    • Browse WRAP by Funder
    • Browse Theses by Department
  • Publications Service
    • Home
    • Search Publications Service
    • Browse by Warwick Author
    • Browse Publications service by Year
    • Browse Publications service by Subject
    • Browse Publications service by Department
    • Browse Publications service by Funder
  • Statistics
  • Help & Advice
University of Warwick

The Library

  • Login

Overcoming low Ge ionization and erosion rate variation for quantitative ultralow energy secondary ion mass spectrometry depth profiles of Si1–xGex/Ge quantum well structures

Tools
- Tools
+ Tools

Morris, R. J. H. (Richard J. H.), Dowsett, M. G., Beanland, Richard, Dobbie, A. (Andrew), Myronov, Maksym and Leadley, D. R. (David R.). (2012) Overcoming low Ge ionization and erosion rate variation for quantitative ultralow energy secondary ion mass spectrometry depth profiles of Si1–xGex/Ge quantum well structures. Analytical Chemistry, Vol.84 (No.5). pp. 2292-2298. ISSN 0003-2700

Full text not available from this repository.
Official URL: http://dx.doi.org/10.1021/ac202929x

Abstract

We specify the O 2 + probe conditions and subsequent data analysis required to obtain high depth resolution secondary ion mass spectrometry profiles from multiple Ge/Si 1-xGe x quantum well structures (0.6 ≤ x ≤ 1). Using an O 2 + beam at normal incidence and with energies >500 eV, we show that the measured Ge signal is not monotonic with concentration, the net result being an unrepresentative and unquantifiable depth profile. This behavior is attributed to a reduced Ge ionization rate as x approaches 1. At lower beam energies the signal behaves monotonically with Ge fraction, indicating that the Ge atoms are now ionizing more readily for the whole range of x, enabling quantitative profiles to be obtained. To establish the depth scale a point-by-point approach based on previously determined erosion rates as a function of x is shown to produce quantum well thicknesses in excellent agreement with those obtained using transmission electron microscopy. The findings presented here demonstrate that to obtain reliable quantitative depth profiles from Ge containing samples requires O 2 + ions below 500 eV and correct account to be taken of the erosion rate variation that exists between layers of different matrix composition. © 2012 American Chemical Society.

Item Type: Journal Article
Subjects: Q Science > QC Physics
Divisions: Faculty of Science > Physics
Journal or Publication Title: Analytical Chemistry
Publisher: American Chemical Society
ISSN: 0003-2700
Date: 6 March 2012
Volume: Vol.84
Number: No.5
Page Range: pp. 2292-2298
Identification Number: 10.1021/ac202929x
Status: Peer Reviewed
Publication Status: Published
Access rights to Published version: Restricted or Subscription Access
URI: http://wrap.warwick.ac.uk/id/eprint/44782

Request changes to a record

Actions (login required)

View Item View Item
twitter

Email us: publications@warwick.ac.uk
Contact Details
About Us