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Carrier recombination effects in strain compensated quantum dot stacks embedded in solar cells

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Alonso-Álvarez, D., Taboada, A. G., Ripalda, J. M., Alén, B., González, Y., González, L., García, J. M., Briones, F., Martí, A., Luque, A., Sánchez, Ana M. and Molina, S. I. (2008) Carrier recombination effects in strain compensated quantum dot stacks embedded in solar cells. Applied Physics Letters, Vol.93 (No.12). p. 123114. doi:10.1063/1.2978243 ISSN 0003-6951.

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Official URL: http://dx.doi.org/10.1063/1.2978243

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Abstract

In this work we report the stacking of 50 InAs/GaAs quantum dot layers with a GaAs spacer thickness of 18 nm using GaP monolayers for strain compensation. We find a good structural and optical quality of the fabricated samples including a planar growth front across the whole structure, a reduction in the quantum dot size inhomogeneity, and an enhanced thermal stability of the emission. The optimized quantum dot stack has been embedded in a solar cell structure and we discuss the benefits and disadvantages of this approach for high efficiency photovoltaic applications.

Item Type: Journal Article
Subjects: Q Science > QC Physics
Divisions: Faculty of Science, Engineering and Medicine > Science > Physics
Journal or Publication Title: Applied Physics Letters
Publisher: American Institute of Physics
ISSN: 0003-6951
Official Date: 22 September 2008
Dates:
DateEvent
22 September 2008Published
Volume: Vol.93
Number: No.12
Page Range: p. 123114
DOI: 10.1063/1.2978243
Status: Peer Reviewed
Publication Status: Published
Access rights to Published version: Restricted or Subscription Access

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