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Carrier recombination effects in strain compensated quantum dot stacks embedded in solar cells
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Alonso-Álvarez, D., Taboada, A. G., Ripalda, J. M., Alén, B., González, Y., González, L., García, J. M., Briones, F., Martí, A., Luque, A., Sánchez, Ana M. and Molina, S. I. (2008) Carrier recombination effects in strain compensated quantum dot stacks embedded in solar cells. Applied Physics Letters, Vol.93 (No.12). p. 123114. doi:10.1063/1.2978243 ISSN 0003-6951.
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Official URL: http://dx.doi.org/10.1063/1.2978243
Abstract
In this work we report the stacking of 50 InAs/GaAs quantum dot layers with a GaAs spacer thickness of 18 nm using GaP monolayers for strain compensation. We find a good structural and optical quality of the fabricated samples including a planar growth front across the whole structure, a reduction in the quantum dot size inhomogeneity, and an enhanced thermal stability of the emission. The optimized quantum dot stack has been embedded in a solar cell structure and we discuss the benefits and disadvantages of this approach for high efficiency photovoltaic applications.
| Item Type: | Journal Article | ||||
|---|---|---|---|---|---|
| Subjects: | Q Science > QC Physics | ||||
| Divisions: | Faculty of Science, Engineering and Medicine > Science > Physics | ||||
| Journal or Publication Title: | Applied Physics Letters | ||||
| Publisher: | American Institute of Physics | ||||
| ISSN: | 0003-6951 | ||||
| Official Date: | 22 September 2008 | ||||
| Dates: |
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| Volume: | Vol.93 | ||||
| Number: | No.12 | ||||
| Page Range: | p. 123114 | ||||
| DOI: | 10.1063/1.2978243 | ||||
| Status: | Peer Reviewed | ||||
| Publication Status: | Published | ||||
| Access rights to Published version: | Restricted or Subscription Access |
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