Thomas, S. M., Prest, M. J. (Martin J.), Whall, Terry E., Leadley, D. R. (David R.), Toniutti, P., Conzatti, F., Esseni, D., Donetti, L., Gámiz, F., Lander, R. J. P., Vellianitis, G., Hellström, P.-E. and Östling, M.. (2011) On the role of Coulomb scattering in hafnium-silicate gated silicon n and p-channel metal-oxide-semiconductor-field-effect-transistors. Journal of Applied Physics, Vol.110 (No.12). Article: 124503. ISSN 0021-8979

Abstract

In this work, the impact of the local and remote Coulomb scattering mechanisms on electron and hole mobility are investigated. The effective mobilities in quasi-planar finFETs with TiN/Hf0.4Si0.6O/SiO2 gate stacks have been measured at 300 K and 4 K. At 300 K, electron mobility is degraded below that of bulk MOSFETs in the literature, whereas hole mobility is comparable. The 4 K electron and hole mobilities have been modeled in terms of ionized impurity, local Coulomb, remote Coulomb and local roughness scattering. An existing model for remote Coulomb scattering from a polycrystalline silicon gate has been adapted to model remote Coulomb scattering from a high-κ/SiO2 gate stack. Subsequently, remote charge densities of 8 × 1012 cm−2 at the Hf0.4Si0.6O/SiO2 interface were extracted and shown to be the dominant Coulomb scattering mechanism for both electron and hole mobilities at 4 K. Finally, a Monte Carlo simulation showed remote Coulomb scattering was responsible for the degraded 300 K electron mobility.

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