The Library
On the role of Coulomb scattering in hafnium-silicate gated silicon n and p-channel metal-oxide-semiconductor-field-effect-transistors
Tools
Thomas, S. M., Prest, M. J. (Martin J.), Whall, Terry E., Leadley, D. R. (David R.), Toniutti, P., Conzatti, F., Esseni, D., Donetti, L., Gámiz, F., Lander, R. J. P., Vellianitis, G., Hellström, P.-E. and Östling, M. (2011) On the role of Coulomb scattering in hafnium-silicate gated silicon n and p-channel metal-oxide-semiconductor-field-effect-transistors. Journal of Applied Physics, Vol.110 (No.12). Article: 124503. doi:10.1063/1.3669490 ISSN 0021-8979.
Research output not available from this repository.
Request-a-Copy directly from author or use local Library Get it For Me service.
Official URL: http://dx.doi.org/10.1063/1.3669490
Abstract
In this work, the impact of the local and remote Coulomb scattering mechanisms on electron and hole mobility are investigated. The effective mobilities in quasi-planar finFETs with TiN/Hf0.4Si0.6O/SiO2 gate stacks have been measured at 300 K and 4 K. At 300 K, electron mobility is degraded below that of bulk MOSFETs in the literature, whereas hole mobility is comparable. The 4 K electron and hole mobilities have been modeled in terms of ionized impurity, local Coulomb, remote Coulomb and local roughness scattering. An existing model for remote Coulomb scattering from a polycrystalline silicon gate has been adapted to model remote Coulomb scattering from a high-κ/SiO2 gate stack. Subsequently, remote charge densities of 8 × 1012 cm−2 at the Hf0.4Si0.6O/SiO2 interface were extracted and shown to be the dominant Coulomb scattering mechanism for both electron and hole mobilities at 4 K. Finally, a Monte Carlo simulation showed remote Coulomb scattering was responsible for the degraded 300 K electron mobility.
Item Type: | Journal Article | ||||
---|---|---|---|---|---|
Subjects: | Q Science > QC Physics | ||||
Divisions: | Faculty of Science, Engineering and Medicine > Science > Physics | ||||
Journal or Publication Title: | Journal of Applied Physics | ||||
Publisher: | American Institute of Physics | ||||
ISSN: | 0021-8979 | ||||
Official Date: | 15 December 2011 | ||||
Dates: |
|
||||
Volume: | Vol.110 | ||||
Number: | No.12 | ||||
Page Range: | Article: 124503 | ||||
DOI: | 10.1063/1.3669490 | ||||
Status: | Peer Reviewed | ||||
Publication Status: | Published | ||||
Access rights to Published version: | Restricted or Subscription Access |
Request changes or add full text files to a record
Repository staff actions (login required)
View Item |