Skip to content Skip to navigation
University of Warwick
  • Study
  • |
  • Research
  • |
  • Business
  • |
  • Alumni
  • |
  • News
  • |
  • About

University of Warwick
Publications service & WRAP

Highlight your research

  • WRAP
    • Home
    • Search WRAP
    • Browse by Warwick Author
    • Browse WRAP by Year
    • Browse WRAP by Subject
    • Browse WRAP by Department
    • Browse WRAP by Funder
    • Browse Theses by Department
  • Publications Service
    • Home
    • Search Publications Service
    • Browse by Warwick Author
    • Browse Publications service by Year
    • Browse Publications service by Subject
    • Browse Publications service by Department
    • Browse Publications service by Funder
  • Statistics
  • Help & Advice
University of Warwick

The Library

  • Login

Increasing the coherence time of single electron spins in diamond by high temperature annealing

Tools
- Tools
+ Tools

Naydenov, Boris, Reinhard, Friedemann, Laemmle, Anke, Richter, V., Kalish, Rafi, D'Haenens-Johansson, Ulrika F. S., Newton, Mark E., Jelezko, Fedor and Wrachtrup, Joerg. (2010) Increasing the coherence time of single electron spins in diamond by high temperature annealing. Applied Physics Letters, Vol.97 (No.24). Article: 242511. ISSN 0003-6951

Full text not available from this repository.
Official URL: http://dx.doi.org/10.1063/1.3527975

Abstract

Negatively charged nitrogen-vacancy (NV-) centers in diamond produced by ion implantation often show properties different from NVs created during the crystal growth. We observe that NVs created from nitrogen ion implantation at 30-300 keV show much shorter electron spin coherence time T-2 as compared to the "natural" NVs and about 20% of them show switching from NV-to NV0. We show that annealing the diamond at T=1200 degrees C substantially increases T2 and at the same time the fraction of NVs converting from NV-to NV0 is greatly reduced. (C) 2010 American Institute of Physics. [doi:10.1063/1.3527975]

Item Type: Journal Article
Subjects: Q Science > QC Physics
Divisions: Faculty of Science > Physics
Journal or Publication Title: Applied Physics Letters
Publisher: American Institute of Physics
ISSN: 0003-6951
Date: 13 December 2010
Volume: Vol.97
Number: No.24
Number of Pages: 3
Page Range: Article: 242511
Identification Number: 10.1063/1.3527975
Status: Peer Reviewed
Publication Status: Published
Access rights to Published version: Restricted or Subscription Access
Funder: German-Israeli Foundation, Landesstiftung Baden-Wurttemberg, VolkswagenStiftung, DFG, JST
Grant number: FOR 1482, SFB/TR21
URI: http://wrap.warwick.ac.uk/id/eprint/4567

Data sourced from Thomson Reuters' Web of Knowledge

Request changes to a record

Actions (login required)

View Item View Item
twitter

Email us: publications@warwick.ac.uk
Contact Details
About Us