Parker-Allotey, Nii-Adotei, Hamilton, Dean P., Alatise, Olayiwola M., Jennings, Michael R., Mawby, P. A. (Philip A.), Nash, Robert Alastair and Magill, Rob (2012) Improved energy efficiency using an IGBT/SiC-Schottky diode pair. In: International Conference on Silicon Carbide and Related Materials 2011, Cleveland, Ohio, U.S.A., Sep 11-16, 2011. Published in: Materials Science Forum, 717-720 pp. 1147-1150.

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Abstract

This paper will demonstrate how the newer Silicon Carbide material semiconductor power devices can contribute to carbon emissions reduction and the speed of adoption of electric vehicles, including hybrids, by enabling significant increases in the driving range. Two IGBT inverter leg modules of identical power rating have been manufactured and tested. One module has silicon-carbide (SiC) Schottky diodes as anti-parallel diodes and the other silicon PiN diodes. The power modules have been tested and demonstrate the superior electrothermal performance of the SiC Schottky diode over the Si PiN diode leading to a reduction in the power module switching losses.

Item Type:	Conference Item (Paper)
Subjects:	T Technology > TK Electrical engineering. Electronics Nuclear engineering
Divisions:	Faculty of Science > Physics
Journal or Publication Title:	Materials Science Forum
Publisher:	Trans Tech Publications Ltd.
ISSN:	1662-9752
Date:	2012
Volume:	717-720
Page Range:	pp. 1147-1150
Identification Number:	10.4028/www.scientific.net/MSF.717-720.1147
Status:	Peer Reviewed
Publication Status:	Published
Access rights to Published version:	Restricted or Subscription Access
Conference Paper Type:	Paper
Title of Event:	International Conference on Silicon Carbide and Related Materials 2011
Type of Event:	Conference
Location of Event:	Cleveland, Ohio, U.S.A.
Date(s) of Event:	Sep 11-16, 2011
URI:	http://wrap.warwick.ac.uk/id/eprint/45852

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