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Trench depth optimization for energy efficient discrete power trench MOSFETs

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Alatise, Olayiwola M., Parker-Allotey, Nii-Adotei, Jennings, M. R., Mawby, P. A. (Philip A.), Kennedy, Ian and Petkos, George (2011) Trench depth optimization for energy efficient discrete power trench MOSFETs. In: The 41st European Solid State Device Research Conference (ESSDERC), Finlandia Hall, Helsinki, Finland, Sep 12-16, 2011. Published in: Solid-State Device Research Conference (ESSDERC), 2011 Proceedings of the European pp. 291-294. ISSN 1930-8876. doi:10.1109/ESSDERC.2011.6044177

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Official URL: http://dx.doi.org/10.1109/ESSDERC.2011.6044177

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Abstract

Power losses are investigated in trench MOSFETs as functions of trench depth and switching frequency. MOSFETs with different trench depths are fabricated and characterized. Measurements show that gate charge and capacitance increases with trench depth thereby increasing switching losses. However, conduction losses reduce with increasing trench depth because of higher gate-modulated accumulation charge at the drain. Since switching losses increase with frequency, the trade-off between the conduction and switching losses for different trench depths will be determined by the switching frequency. In conclusion, deep-trench MOSFETs outperform shallow-trench MOSFETs at low frequencies and become outperformed by the latter at high frequencies.

Item Type: Conference Item (Paper)
Subjects: T Technology > TK Electrical engineering. Electronics Nuclear engineering
Divisions: Faculty of Science, Engineering and Medicine > Engineering > Engineering
Journal or Publication Title: Solid-State Device Research Conference (ESSDERC), 2011 Proceedings of the European
Publisher: IEEE
ISSN: 1930-8876
Book Title: 2011 Proceedings of the European Solid-State Device Research Conference (ESSDERC)
Official Date: 2011
Dates:
DateEvent
2011UNSPECIFIED
Page Range: pp. 291-294
DOI: 10.1109/ESSDERC.2011.6044177
Status: Not Peer Reviewed
Publication Status: Published
Access rights to Published version: Restricted or Subscription Access
Funder: Advantage West Midlands (AWM)
Conference Paper Type: Paper
Title of Event: The 41st European Solid State Device Research Conference (ESSDERC)
Type of Event: Conference
Location of Event: Finlandia Hall, Helsinki, Finland
Date(s) of Event: Sep 12-16, 2011

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