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A design methodology for maximizing the voltage gain of strained Si MOSFETs using the thickness of the silicon-germanium strain relaxed buffer as a design parameter
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Alatise, Olayiwola M., Kwa, Kelvin S. K., Olsen, Sarah H. and O'Neill, Anthony G. (2009) A design methodology for maximizing the voltage gain of strained Si MOSFETs using the thickness of the silicon-germanium strain relaxed buffer as a design parameter. In: International Semiconductor Device Research Symposium (ISDRS), College Park, Maryland, U.S.A., Dec 9-11, 2009. Published in: 2009 International Semiconductor Device Research Symposium (ISDRS 2009) pp. 1-2.
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Official URL: http://dx.doi.org/10.1109/ISDRS.2009.5378304
| Item Type: | Conference Item (Other) |
|---|---|
| Subjects: | T Technology > TK Electrical engineering. Electronics Nuclear engineering |
| Divisions: | Faculty of Science > Engineering |
| Journal or Publication Title: | 2009 International Semiconductor Device Research Symposium (ISDRS 2009) |
| Publisher: | IEEE |
| Book Title: | 2009 International Semiconductor Device Research Symposium |
| Date: | 2009 |
| Page Range: | pp. 1-2 |
| Identification Number: | 10.1109/ISDRS.2009.5378304 |
| Status: | Not Peer Reviewed |
| Publication Status: | Published |
| Access rights to Published version: | Restricted or Subscription Access |
| Conference Paper Type: | Other |
| Title of Event: | International Semiconductor Device Research Symposium (ISDRS) |
| Type of Event: | Other |
| Location of Event: | College Park, Maryland, U.S.A. |
| Date(s) of Event: | Dec 9-11, 2009 |
| URI: | http://wrap.warwick.ac.uk/id/eprint/45862 |
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