Pérez-Tomás, Amador, Fontserè, A., Placidi, Marcel, Baron, N., Chenot, Sébastien, Cordier, Yvon, Moreno, J.C., Gammon, P. M. and Jennings, Michael R. (2011) Ohmic contact resistance to GaN devices dependence with on temperature for GaN devices. In: 8th European Conference on Silicon Carbide and Related Materials (ECSCRM 2010), Oslo, Norway, Aug 29 - Sep 2, 2010. Published in: Materials Science Forum, Vol. 679-680 pp. 816-819.

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Abstract

The temperature dependence of Ohmic contacts to GaN devices is investigated in this paper via by measuring TLM contact resistances TLM vs Tas a function of temperature. measurements. In particular, the two types of Ohmic contacts are considered: (1) Contacts to highly doped implanted regions (such as the MOSFET drain/source contacts or the back contact of Schottky diodes) and (2) contacts to the 2 dimensional electron gas (2DEG) of an AlGaN/GaN heterojunction.

Item Type:	Conference Item (Paper)
Subjects:	T Technology > TK Electrical engineering. Electronics Nuclear engineering
Divisions:	Faculty of Science > Engineering
Journal or Publication Title:	Materials Science Forum
Publisher:	Trans Tech Publications Ltd.
ISSN:	0255-5476
Date:	2011
Volume:	Vol. 679-680
Page Range:	pp. 816-819
Identification Number:	10.4028/www.scientific.net/MSF.679-680.816
Status:	Peer Reviewed
Publication Status:	Published
Access rights to Published version:	Restricted or Subscription Access
Conference Paper Type:	Paper
Title of Event:	8th European Conference on Silicon Carbide and Related Materials (ECSCRM 2010)
Type of Event:	Conference
Location of Event:	Oslo, Norway
Date(s) of Event:	Aug 29 - Sep 2, 2010
URI:	http://wrap.warwick.ac.uk/id/eprint/46251

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