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Layered metal and highly doped MBE Si contacts for 4H-SiC power devices
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Jennings, M. R., Pérez-Tomás, Amador, Gammon, P. M., Davis, M., Chow, T. P. and Mawby, P. A. (Philip A.) (2008) Layered metal and highly doped MBE Si contacts for 4H-SiC power devices. In: 9th International Seminar on Power Semiconductors (ISPS 2008) , Prague, Czech Republic, Aug 27-29, 2008. Published in: IET Digest, Vol.2008 (No.2). pp. 69-72.
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Official URL: http://dx.doi.org/10.1049/ic:20080185
Abstract
This paper presents two contacting methods for 4H-SiC power devices: layered metal and highly doped molecular beam epitaxy (MBE) silicon (Si) contacts. Layered metallic contacts are based on nickel (Ni), aluminium (Al) and titanium (Ti), displaying low specific contact resistivities to p-type 4 H-SiC in the range of 10-4 -10-6 Omega cm2 . Ti based contacts display the lowest specific contact resistivity of 5.02 × 10-6 Omega cm2 . X-ray diffraction (XRD) scans point to enhanced silicide formation for Al-Ti(Ti3SiC2) and Al-Ni(NixSi) contacts that displayed ohmicity. The second contacting method presents the electrical and physical characteristics of highly doped MBE Si layers above 4H-SiC. This form of Si/SiC heterojunction contact presents significant SiC processing advantages for the semiconductor industry, eliminating high temperature annealing steps. Electrical measurements have been performed and highlight the Schottky-type rectifying properties displayed by Si/SiC heterojunctions. A scanning electron microscope (SEM) was employed to examine the surface morphology of the MBE Si layers. Smoother surfaces with less island formation have been correlated to low temperature (500°C) MBE Si growth.
| Item Type: | Conference Item (Paper) |
|---|---|
| Subjects: | T Technology > TK Electrical engineering. Electronics Nuclear engineering |
| Divisions: | Faculty of Science > Engineering |
| Journal or Publication Title: | IET Digest |
| Publisher: | Institute of Engineering Technology |
| Book Title: | 9th International Seminar on Power Semiconductors (ISPS 2008) |
| Date: | 2008 |
| Volume: | Vol.2008 |
| Number: | No.2 |
| Page Range: | pp. 69-72 |
| Identification Number: | 10.1049/ic:20080185 |
| Status: | Peer Reviewed |
| Publication Status: | Published |
| Access rights to Published version: | Restricted or Subscription Access |
| Conference Paper Type: | Paper |
| Title of Event: | 9th International Seminar on Power Semiconductors (ISPS 2008) |
| Type of Event: | Other |
| Location of Event: | Prague, Czech Republic |
| Date(s) of Event: | Aug 27-29, 2008 |
| URI: | http://wrap.warwick.ac.uk/id/eprint/46260 |
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