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Silicon carbide Schottky diodes and MOSFETs: solutions to performance problems
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Guy, Owen J., Lodzinski, Michal, Castaing, Ambroise, Igic, P. M., Pérez-Tomás, Amador, Jennings, M. R. and Mawby, P. A. (Philip A.) (2008) Silicon carbide Schottky diodes and MOSFETs: solutions to performance problems. In: 13th International Power Electronics and Motion Control Conference, Poznan, Poland, Sep 01-03, 2008. Published in: Proceedings of the 13th International Power Electronics and Motion Control Conference, Vol.1-5 pp. 2464-2471. doi:10.1109/EPEPEMC.2008.4635633
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Official URL: http://dx.doi.org/10.1109/EPEPEMC.2008.4635633
Abstract
Silicon carbide has long been hailed as the successor to silicon in many power electronics applications. Its superior electrical and thermal properties have delivered devices that operate at higher voltages, higher temperatures and with lower on-resistances than silicon devices. However, SiC Schottky diodes are still the only devices commercially available today. Though SiC Schottkys are now being used with silicon IGBTs in dasiahybridpsila inverter modules, the real advantages will be seen when silicon switching devices can be replaced by SiC. This paper describes the current state of SiC diode and MOSFET technology, discussing possible solutions to making these devices commercially viable.
Item Type: | Conference Item (Paper) | ||||
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Subjects: | T Technology > TK Electrical engineering. Electronics Nuclear engineering | ||||
Divisions: | Faculty of Science, Engineering and Medicine > Engineering > Engineering | ||||
Journal or Publication Title: | Proceedings of the 13th International Power Electronics and Motion Control Conference | ||||
Publisher: | Institute of Electrical and Electronics Engineers | ||||
Book Title: | 2008 13th International Power Electronics and Motion Control Conference | ||||
Official Date: | 2008 | ||||
Dates: |
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Volume: | Vol.1-5 | ||||
Page Range: | pp. 2464-2471 | ||||
DOI: | 10.1109/EPEPEMC.2008.4635633 | ||||
Status: | Not Peer Reviewed | ||||
Publication Status: | Published | ||||
Access rights to Published version: | Restricted or Subscription Access | ||||
Funder: | Department of Trade and Industry (UK) | ||||
Grant number: | TP/3/OPT/6/I/17311 | ||||
Conference Paper Type: | Paper | ||||
Title of Event: | 13th International Power Electronics and Motion Control Conference | ||||
Type of Event: | Conference | ||||
Location of Event: | Poznan, Poland | ||||
Date(s) of Event: | Sep 01-03, 2008 |
Data sourced from Thomson Reuters' Web of Knowledge
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