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Silicon carbide Schottky diodes and MOSFETs: solutions to performance problems

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Guy, Owen J., Lodzinski, Michal, Castaing, Ambroise, Igic, P. M., Pérez-Tomás, Amador, Jennings, Michael R. and Mawby, P. A. (Philip A.) (2008) Silicon carbide Schottky diodes and MOSFETs: solutions to performance problems. In: 13th International Power Electronics and Motion Control Conference, Poznan, Poland, Sep 01-03, 2008. Published in: Proceedings of the 13th International Power Electronics and Motion Control Conference, Vol.1-5 pp. 2464-2471.

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Official URL: http://dx.doi.org/10.1109/EPEPEMC.2008.4635633

Abstract

Silicon carbide has long been hailed as the successor to silicon in many power electronics applications. Its superior electrical and thermal properties have delivered devices that operate at higher voltages, higher temperatures and with lower on-resistances than silicon devices. However, SiC Schottky diodes are still the only devices commercially available today. Though SiC Schottkys are now being used with silicon IGBTs in dasiahybridpsila inverter modules, the real advantages will be seen when silicon switching devices can be replaced by SiC. This paper describes the current state of SiC diode and MOSFET technology, discussing possible solutions to making these devices commercially viable.

Item Type: Conference Item (Paper)
Subjects: T Technology > TK Electrical engineering. Electronics Nuclear engineering
Divisions: Faculty of Science > Engineering
Journal or Publication Title: Proceedings of the 13th International Power Electronics and Motion Control Conference
Publisher: Institute of Electrical and Electronics Engineers
Book Title: 2008 13th International Power Electronics and Motion Control Conference
Date: 2008
Volume: Vol.1-5
Page Range: pp. 2464-2471
Identification Number: 10.1109/EPEPEMC.2008.4635633
Status: Not Peer Reviewed
Publication Status: Published
Access rights to Published version: Restricted or Subscription Access
Funder: Department of Trade and Industry (UK)
Grant number: TP/3/OPT/6/I/17311
Conference Paper Type: Paper
Title of Event: 13th International Power Electronics and Motion Control Conference
Type of Event: Conference
Location of Event: Poznan, Poland
Date(s) of Event: Sep 01-03, 2008
URI: http://wrap.warwick.ac.uk/id/eprint/46383

Data sourced from Thomson Reuters' Web of Knowledge

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