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Magnetoresistivity and acoustoelectronic effects in a tilted magnetic field in p-Si/SiGe/Si structures with an anisotropic g factor

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Drichko, I. L., Smirnov, I. Yu., Suslov, A. V., Mironov, O. A. and Leadley, D. R. (David R.) (2010) Magnetoresistivity and acoustoelectronic effects in a tilted magnetic field in p-Si/SiGe/Si structures with an anisotropic g factor. Journal of experimental and Theoretical Physics, Vol.111 (No.3). pp. 495-502. doi:10.1134/S1063776110090189

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Official URL: http://dx.doi.org/10.1134/S1063776110090189

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Abstract

Magnetoresistivity rho (xx) and rho (xy) and the acoustoelectronic effects are measured in p-Si/SiGe/Si with an impurity concentration p = 1.99 x 10(11) cm(-2) in the temperature range 0.3-2.0 K and an tilted magnetic field up to 18 T. The dependence of the effective g factor on the angle of magnetic field tilt theta to the normal to the plane of a two-dimensional p-Si/SiGe/Si channel is determined. A first-order ferromagnet-paramagnet phase transition is observed in the magnetic fields corresponding to a filling factor nu = 2 at theta a parts per thousand 59A degrees aEuro"60A degrees.

Item Type: Journal Article
Subjects: Q Science > QC Physics
Divisions: Faculty of Science, Engineering and Medicine > Science > Physics
Journal or Publication Title: Journal of experimental and Theoretical Physics
Publisher: MAIK Nauka - Interperiodica
ISSN: 1063-7761
Official Date: September 2010
Dates:
DateEvent
September 2010Published
Volume: Vol.111
Number: No.3
Number of Pages: 8
Page Range: pp. 495-502
DOI: 10.1134/S1063776110090189
Status: Peer Reviewed
Publication Status: Published
Funder: Russian Foundation for Basic Research, Presidium of the Russian Academy of Sciences, Department of Physical Sciences, Russian Academy of Sciences, state program for support of leading scientific schools, National Scientific Foundation (NSF), State of Florida
Grant number: 08-02-00852, NSh-2184.2008.2, DMR-0654118

Data sourced from Thomson Reuters' Web of Knowledge

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