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Relaxation dynamics and residual strain in metamorphic AlSb on GaAs
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Ripalda, J. M., Sánchez, Ana M., Taboada, A. G., Rivera, A., Alén, B., González, Y., González, L., Briones, F., Rotter, T. J. and Balakrishnan, Geetha (2012) Relaxation dynamics and residual strain in metamorphic AlSb on GaAs. Applied Physics Letters, Vol. 100 (No. 1). 012103. doi:10.1063/1.3674986
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Official URL: http://dx.doi.org/10.1063/1.3674986
Abstract
We have observed the evolution of the accumulated stress during heteroepitaxial growth of highly lattice mismatched AlSb on GaAs by measuring the deformation of the substrate as a function of time. High resolution transmission electron microscopy images show almost all of the plastic relaxation is accommodated by an array of 90° misfit dislocations at the interface. The in-plane lattice parameter of the resulting metamorphic AlSb is slightly smaller (0.3%) than the bulk value and perfectly matches the lattice parameter of bulk GaSb. It is, therefore, possible to grow nearly stress-free GaSb on GaAs using a metamorphic AlSb buffer layer.
| Item Type: | Journal Article | ||||
|---|---|---|---|---|---|
| Divisions: | Faculty of Science > Physics | ||||
| Journal or Publication Title: | Applied Physics Letters | ||||
| Publisher: | Applied Physics Letters | ||||
| ISSN: | 00036951 | ||||
| Official Date: | 2012 | ||||
| Dates: |
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| Volume: | Vol. 100 | ||||
| Number: | No. 1 | ||||
| Page Range: | 012103 | ||||
| DOI: | 10.1063/1.3674986 | ||||
| Status: | Peer Reviewed | ||||
| Publication Status: | Published | ||||
| Access rights to Published version: | Restricted or Subscription Access |
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