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Structural Origin of Enhanced Luminescence Efficiency of Antimony Irradiated InAs Quantum Dots
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Beltran, Ana M., Ben, Teresa, Sales, David L., Sánchez, Ana M., Ripalda, Jose M., Taboada, Alfonso G., Varela, Maria, Pennycook, Stephen J. and Molina, Sergio I. (2011) Structural Origin of Enhanced Luminescence Efficiency of Antimony Irradiated InAs Quantum Dots. Advanced Science Letters, Vol. 4 (No. 11). pp. 3776-3778. doi:10.1166/asl.2011.1873
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Official URL: http://dx.doi.org/10.1166/asl.2011.1873
Abstract
We report that Sb irradiation combined with the presence of a GaAs intermediate layer previous to the deposition of a GaSb layer over InAs quantum dots grown by molecular beam epitaxy improves the crystalline quality of these nanostructures. Moreover, this approach to develop III-V-Sb nanostructures causes the formation of quantum dots buried by a confining GaSb layer and, in this way, achieving a type II band alignment. Both phenomena, studied by Conventional transmission electron microscopy (CTEM) and scanning-transmission electron microscope (STEM) techniques are keys to achieve the best room temperature photoluminescence results from InAs/GaAs (001) quantum dots. The Sb flux contributes to the preservation of the quantum dots size and at the same time reduces In diffusion from the wetting layer.
| Item Type: | Journal Article | ||||
|---|---|---|---|---|---|
| Divisions: | Faculty of Science > Physics | ||||
| Journal or Publication Title: | Advanced Science Letters | ||||
| Publisher: | American Scientific Publishers | ||||
| ISSN: | 1936 6612 | ||||
| Official Date: | 2011 | ||||
| Dates: |
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| Volume: | Vol. 4 | ||||
| Number: | No. 11 | ||||
| Page Range: | pp. 3776-3778 | ||||
| DOI: | 10.1166/asl.2011.1873 | ||||
| Status: | Peer Reviewed | ||||
| Publication Status: | Published |
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